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Titolo:
Temperature cross-sensitivity of Hall plate in submicron CMOS technology
Autore:
Manic, D; Petr, J; Popovic, RS;
Indirizzi:
Swiss Fed Inst Technol, Inst Microsyst, EPFL, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol Lausanne Switzerland CH-1015 ausanne, Switzerland Siemens Metering Ltd, CH-6301 Zug, Switzerland Siemens Metering Ltd Zug Switzerland CH-6301 d, CH-6301 Zug, Switzerland
Titolo Testata:
SENSORS AND ACTUATORS A-PHYSICAL
fascicolo: 1-3, volume: 85, anno: 2000,
pagine: 244 - 248
SICI:
0924-4247(20000825)85:1-3<244:TCOHPI>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Keywords:
Hall plate; temperature coefficient; freeze-out; Piezo-Hall; packaging; stress; accuracy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Manic, D Swiss Fed Inst Technol, Inst Microsyst, EPFL, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol Lausanne Switzerland CH-1015 Switzerland
Citazione:
D. Manic et al., "Temperature cross-sensitivity of Hall plate in submicron CMOS technology", SENS ACTU-A, 85(1-3), 2000, pp. 244-248

Abstract

The temperature coefficient at the current-related sensitivity of a Hall plate in submicron CMOS technology was measured. A zero-temperature-coefficient region was observed. A model of the temperature coefficient based an the freeze-out effect and the temperature dependence of the Hall scattering factor was developed. Using a Hall sensor in the observed zero-temperature-coefficient region may significantly improve its measurement accuracy. The additional, very high influence of mechanical stress, due to the piezo-Hall effect, on the temperature coefficient has been analyzed for two packaging techniques. (C) 2000 Elsevier Science S.A. All rights reserved.

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Documento generato il 29/11/20 alle ore 10:33:42