Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Sb-mediated Ge growth on singular and vicinal Si(001) surfaces: A surface optical characterization study
Autore:
Power, JR; Hinrichs, K; Peters, S; Haberland, K; Esser, N; Richter, W;
Indirizzi:
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 11, volume: 62, anno: 2000,
pagine: 7378 - 7386
SICI:
0163-1829(20000915)62:11<7378:SGGOSA>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
STRANSKI-KRASTANOV GROWTH; EPITAXIAL-GROWTH; RAMAN-SPECTROSCOPY; STRAIN RELAXATION; X-RAY; DIMER EXCHANGE; INITIAL-STAGES; SI(100); GE/SI(001); LAYERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
43
Recensione:
Indirizzi per estratti:
Indirizzo: Power, JR TDL, Infineon Technol, Konigsbrucker Str 180, D-01099 Dresden, Germany TDL Konigsbrucker Str 180 Dresden Germany D-01099 sden, Germany
Citazione:
J.R. Power et al., "Sb-mediated Ge growth on singular and vicinal Si(001) surfaces: A surface optical characterization study", PHYS REV B, 62(11), 2000, pp. 7378-7386

Abstract

in this work, we apply Raman spectroscopy (RS) and spectroscopic ellipsometry (SE) to surfactant mediated growth (SMG) of Ge on Si(001) surfaces. Under molecular-beam epitaxy conditions, a growth temperature of 400 degrees Cand in the absence of a predeposited surfactant (Sb) monolayer, we show that SE can be used to determine the Stranski-Krastanov critical thickness for island formation. In the presence of a predeposited Sb monolayer, SE predicts that layer-by-layer growth is possible up to a Ge coverage of 20 monolayers (MLs). However. no evidence of relaxation through dislocation formation, known to exist in this coverage regime, could be detected. With RS, we present one of the first studies of Sb mediated growth on a vicinal Si(001)substrate. Two Sb surface related phonon peaks are identified, one associated with Sb dimers bonded to the Si(001) substrate (130.5 cm(-1)), the other with Sb dimers on the grown Ge epilayer (141 cm(-1)). The former disappears and the latter appears gradually with increased Ge coverage up to 3.5 MLs. This indicates that surfactant exchange occurs differently on vicinal Si(001) than on singular Si(001), where exchange has been shown to be complete by deposition of between 0.5-1.0 monolayer (ML). To explain this difference, step bunching must occur during the initial stages of growth on vicinalSi (001), leading to areas of preferred growth on the surface. At a higherCe coverage of 20 hits, theoretical predictions of the Raman shift for a strained pseudomorphically grown Ge layer show good agreement with the Ramandata presented. This demonstrates that even at 20 ML coverage, some areas of unrelaxed Ge must still exist, pointing to inhomogeneities within the Geepilayer, as predicted by our model for SMG on a step bunched Si(001) substrate.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/01/21 alle ore 02:41:16