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Titolo:
In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry
Autore:
Peters, S; Schmidtling, T; Trepk, T; Pohl, UW; Zettler, JT; Richter, W;
Indirizzi:
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany SENTECH Instruments GmbH, D-12489 Berlin, Germany SENTECH Instruments GmbH Berlin Germany D-12489 D-12489 Berlin, Germany
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 7, volume: 88, anno: 2000,
pagine: 4085 - 4090
SICI:
0021-8979(20001001)88:7<4085:ISMOGM>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
CONTINUOUS-WAVE OPERATION; NUCLEATION LAYERS; REFLECTANCE ANISOTROPY; SAPPHIRE SUBSTRATE; BUFFER LAYER; LASER-DIODES; GROWTH; TEMPERATURE; DEPOSITION; NITRIDATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
29
Recensione:
Indirizzi per estratti:
Indirizzo: Zettler, JT Tech Univ Berlin, Inst Festkorperphys, Sekr PN 6-1,Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin Sekr PN 6-1,Hardenbergstr 36 Berlin Germany D-10623
Citazione:
S. Peters et al., "In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry", J APPL PHYS, 88(7), 2000, pp. 4085-4090

Abstract

Epitaxy of high-quality GaN on sapphire requires a rather sophisticated substrate preparation prior to the GaN epilayer growth, namely nitridation ofthe substrate's surface, growth of a GaN nucleation layer at a relative low temperature, and reduction of the defect density of this layer by a subsequent annealing step. For studying both, the detailed mechanisms of this complex procedure and its growth parameter dependencies, we attached an in situ spectroscopic ellipsometer to a nitride metal-organic vapor phase epitaxy reactor. First, the high-temperature dielectric function of GaN was measured using samples from different suppliers. Based on these data, the effectof growth parameter variations on the crystal quality of GaN epilayers could be monitored in situ. In particular, we determined the threshold temperature and the duration of the substrate nitridation under ammonia as well asthe thermal threshold and duration of the nucleation layer transformation. Additionally, based on the in situ measurements a qualitative estimate forthe crystalline quality of the nucleation layer and the epilayer is provided. Finally, the surface roughness of differently prepared GaN layers was evaluated by using the high-energy spectroscopic range of our vacuum-ultraviolet ellipsometer (3.5-9.0 eV). (C) 2000 American Institute of Physics. [S0021-8979(00)00619-8].

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Documento generato il 23/01/21 alle ore 10:08:06