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Titolo:
Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth
Autore:
Pristovsek, M; Menhal, H; Zettler, JT; Richter, W;
Indirizzi:
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 1-4, volume: 166, anno: 2000,
pagine: 433 - 436
SICI:
0169-4332(20001009)166:1-4<433:DOGOTG>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTANCE-DIFFERENCE SPECTROSCOPY; VAPOR-PHASE EPITAXY; GAAS(001);
Keywords:
MOVPE; gallium diffusion; step-bunching; high index surfaces; activation energy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Pristovsek, M Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin Hardenbergstr 36 Berlin Germany D-10623 ny
Citazione:
M. Pristovsek et al., "Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth", APPL SURF S, 166(1-4), 2000, pp. 433-436

Abstract

We have measured the valley spacing on the GaAs (113) surface using ex-situ atomic force microscopy (AFM). From samples grown at different temperatures and partial pressures, the diffusion length, activation energies for diffusion and diffusion constants were derived. The results were correlated toin-situ reflectance anisotropy spectroscopy (RAS) spectra. On GaAs (113), mainly, an (8 x 1) reconstruction is found with an EDiff = (0.38 +/- 0.06) eV. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 20/01/21 alle ore 12:34:49