Catalogo Articoli (Spogli Riviste)
OPAC HELP
Titolo: Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth
Autore: Pristovsek, M; Menhal, H; Zettler, JT; Richter, W;
- Indirizzi:
- Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany
- Titolo Testata:
- APPLIED SURFACE SCIENCE
fascicolo: 1-4,
volume: 166,
anno: 2000,
pagine: 433 - 436
- SICI:
- 0169-4332(20001009)166:1-4<433:DOGOTG>2.0.ZU;2-2
- Fonte:
- ISI
- Lingua:
- ENG
- Soggetto:
- REFLECTANCE-DIFFERENCE SPECTROSCOPY; VAPOR-PHASE EPITAXY; GAAS(001);
- Keywords:
- MOVPE; gallium diffusion; step-bunching; high index surfaces; activation energy;
- Tipo documento:
- Article
- Natura:
- Periodico
- Settore Disciplinare:
- Physical, Chemical & Earth Sciences
- Engineering, Computing & Technology
- Citazioni:
- 10
- Recensione:
- Indirizzi per estratti:
- Indirizzo: Pristovsek, M Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin Hardenbergstr 36 Berlin Germany D-10623 ny
-
-
-
- Citazione:
- M. Pristovsek et al., "Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth", APPL SURF S, 166(1-4), 2000, pp. 433-436
Abstract
We have measured the valley spacing on the GaAs (113) surface using ex-situ atomic force microscopy (AFM). From samples grown at different temperatures and partial pressures, the diffusion length, activation energies for diffusion and diffusion constants were derived. The results were correlated toin-situ reflectance anisotropy spectroscopy (RAS) spectra. On GaAs (113), mainly, an (8 x 1) reconstruction is found with an EDiff = (0.38 +/- 0.06) eV. (C) 2000 Elsevier Science B.V. All rights reserved.
ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/01/21 alle ore 12:34:49