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Titolo:
Low-energy argon ion beam treatment of a-Si : H/Si structure
Autore:
Pincik, E; Jergel, M; Gmucova, K; Gleskova, H; Kucera, M; Mullerova, J; Brunel, M; Mikula, M;
Indirizzi:
Slovak Acad Sci, Inst Phys, Bratislava 84228, Slovakia Slovak Acad Sci Bratislava Slovakia 84228 ys, Bratislava 84228, Slovakia Princeton Univ, Princeton, NJ 08544 USA Princeton Univ Princeton NJ USA 08544 ceton Univ, Princeton, NJ 08544 USA Slovak Acad Sci, Inst Elect Engn, Bratislava 84228, Slovakia Slovak Acad Sci Bratislava Slovakia 84228 gn, Bratislava 84228, Slovakia Mil Acad, Liptovsky Mikukas, Slovakia Mil Acad Liptovsky Mikukas Slovakia l Acad, Liptovsky Mikukas, Slovakia CNRS, Lab Cristallog, F-38402 Grenoble 09, France CNRS Grenoble France 09 NRS, Lab Cristallog, F-38402 Grenoble 09, France Slovak Tech Univ, Fac Chem Technol, Bratislava 81237, Slovakia Slovak TechUniv Bratislava Slovakia 81237 l, Bratislava 81237, Slovakia
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 1-4, volume: 166, anno: 2000,
pagine: 61 - 66
SICI:
0169-4332(20001009)166:1-4<61:LAIBTO>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; DEFECT-POOL MODEL; GAP STATES;
Keywords:
ion beam; a-Si : H/Si; x-ray reflection;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Pincik, E Slovak Acad Sci, Inst Phys, Dubravska Cesta 9, Bratislava 84228,Slovakia Slovak Acad Sci Dubravska Cesta 9 Bratislava Slovakia 84228 kia
Citazione:
E. Pincik et al., "Low-energy argon ion beam treatment of a-Si : H/Si structure", APPL SURF S, 166(1-4), 2000, pp. 61-66

Abstract

The results of several surface-sensitive techniques applied to the investigation of ion beam-treated a-Si:H/crystalline silicon structures, such as deep-level transient spectroscopy (DLTS), photoluminescence at 6 K and room temperature, and X-ray diffraction at grazing incidence (XRDGI) are presented. Three important results follow from this contribution. (i) Two groups of gap states with thermal activation energies of 0.71 and 0.84 eV were identified and found to be sensitive to illumination, this property exhibiting metastable character; we suppose effects similar to those observed in the porous silicon/silicon and a-Si:H/silicon structures. (ii) Broader luminescence peaks were identified optically with the energies lying in the range of 0.7 to 0.95 eV, the most distinct one being at 0.85eV. (iii) X-ray reflection at 2 theta similar to 28 degrees has been found as the reflection suitable for tracing the structural properties of a-Si:H layer. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 05/12/20 alle ore 19:32:25