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Titolo:
Atomic oxygen-induced surface processes: D2O formation and D-2 desorption on the D/Si(100) surface
Autore:
Shimokawa, S; Khanom, F; Fujimoto, T; Inanaga, S; Namiki, A; Ando, T;
Indirizzi:
Kyushu Inst Technol, Dept Elect Engn, Fukuoka 8048550, Japan Kyushu Inst Technol Fukuoka Japan 8048550 t Engn, Fukuoka 8048550, Japan Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan Natl Inst Res Inorgan Mat Tsukuba Ibaraki Japan 3050044 ki 3050044, Japan
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 1-2, volume: 167, anno: 2000,
pagine: 94 - 98
SICI:
0169-4332(20001016)167:1-2<94:AOSPDF>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
GASEOUS H-ATOMS; HYDROGEN; OXIDATION; SI(100); ABSTRACTION; KINETICS;
Keywords:
hydrogen-terminated Si surface; hydrogen abstraction; atomic oxygen;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Namiki, A Kyushu Inst Technol, Dept Elect Engn, Kitakyushu 804, Fukuoka 8048550, Japan Kyushu Inst Technol Kitakyushu 804 Fukuoka Japan 8048550 Japan
Citazione:
S. Shimokawa et al., "Atomic oxygen-induced surface processes: D2O formation and D-2 desorption on the D/Si(100) surface", APPL SURF S, 167(1-2), 2000, pp. 94-98

Abstract

The atomic oxygen-induced surface reaction has been studied on the D/Si(100) surfaces. The mass spectroscopic method reveals that D-2 desorption as well as D2O formation are induced upon collision of oxygen atoms with the D/Si(100) surfaces. As the oxygen atoms are taken into the Si-Si bonds, the desorption of D-2 and D2O molecules is terminated despite the survival of the D adatoms. We propose a possible mechanism of the oxygen-induced D2O formation and D-2 desorption. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 06:44:49