Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Reactive ion etching of InP for optoelectronic device applications: Comparison in CH4, CH4/H-2, and CH4/Ar gas
Autore:
Yu, JS; Lee, YT;
Indirizzi:
Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 00712, South Korea
Titolo Testata:
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
fascicolo: 3, volume: 37, anno: 2000,
pagine: 241 - 246
SICI:
0374-4884(200009)37:3<241:RIEOIF>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
III-V-SEMICONDUCTORS; INDUCED DAMAGE; PLASMA; MIXTURES; GAAS; TEMPERATURE; DEPENDENCE; CHLORINE; SIDEWALL; SICL4;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Yu, JS Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712,South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 South Korea
Citazione:
J.S. Yu e Y.T. Lee, "Reactive ion etching of InP for optoelectronic device applications: Comparison in CH4, CH4/H-2, and CH4/Ar gas", J KOR PHYS, 37(3), 2000, pp. 241-246

Abstract

The etching characteristics of InP using reactive ion etching in CH4 gas with/without Ha (or Ar) as diluents were compared. Etching parameters, such as the CH4 flow rate, the H-2 (or Ar) flow rate, the RF power, and the process pressure, were varied. The etch rates were measured by using a surface profiler. The etched profiles, sidewall roughness, and surface morphology were observed from scanning electron microscopy and atomic force microscopy measurements. The composition and the stoichiometry of etched surfaces wereexamined by both Auger electron spectroscopy and X-ray photoelectron spectroscopy. The results suggest that a CH4 (10 sccm)/H-2 (40 sccm) gas mixtureis the most promising for achieving ideal etching profiles in terms of surface roughness and anisotropy, which are suitable for fabricating of optoelectronic devices. Optical waveguides and 1 x N multimode interference powersplitters with a weakly guided ridge waveguide structure on InGaAsP/InP materials were fabricated by using the optimized CH4/H-2 RIE process.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 09/04/20 alle ore 07:35:18