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Titolo:
Atomic layer chemical vapor deposition of TiO2 - Low temperature epitaxy of rutile and anatase
Autore:
Schuisky, M; Harsta, A; Aidla, A; Kukli, K; Kiisler, AA; Aarik, J;
Indirizzi:
Uppsala Univ, Dept Inorgan Chem, Angstrom Lab, SE-75121 Uppsala, Sweden Uppsala Univ Uppsala Sweden SE-75121 strom Lab, SE-75121 Uppsala, Sweden Univ Tartu, Inst Mat Sci, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 Inst Mat Sci, EE-51010 Tartu, Estonia Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia
Titolo Testata:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
fascicolo: 9, volume: 147, anno: 2000,
pagine: 3319 - 3325
SICI:
0013-4651(200009)147:9<3319:ALCVDO>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIOXIDE THIN-FILMS; COMPOUND SEMICONDUCTORS; GROWTH; SYSTEM; ALPHA-AL2O3; CHEMISTRY; PRECURSOR; SURFACE; BEAM; TIN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
38
Recensione:
Indirizzi per estratti:
Indirizzo: Schuisky, M Uppsala Univ, Dept Inorgan Chem, Angstrom Lab, SE-75121 Uppsala, Sweden Uppsala Univ Uppsala Sweden SE-75121 E-75121 Uppsala, Sweden
Citazione:
M. Schuisky et al., "Atomic layer chemical vapor deposition of TiO2 - Low temperature epitaxy of rutile and anatase", J ELCHEM SO, 147(9), 2000, pp. 3319-3325

Abstract

This study demonstrates that atomic layer chemical vapor deposition is an excellent technique for growing epitaxial TiO2 thin films at low temperatures. Using TiI4 and H2O2 as precursors, both the rutile and anatase phases could be deposited. Anatase is invariably obtained at lower deposition temperatures, but the temperature of the anatase/rutile phase boundary is affected by the substrate material chosen. Phase-pure rutile was obtained down to275 degrees C on a-Al2O3 (012), while phase-pure anatase was obtained up to 375 degrees C on MgO (001). The rutile phase was found to grow epitaxially on both alpha-A1203 (012) and alpha-Al2O3 (001) substrates with the in-plane orientational relationships [010](rutile)//[100](alpha-Al2O3); [101](rutile)//[121](alpha-Al2O3) and [001](rutile)//[120](alpha-Al2O3), and [010](rutile)//[100](alpha-Al2O3,) respectively. The anatase phase was found to grow epitaxially on MgO (0 0 I) with the in-plane orientational relationships [010](anatase)//[010](MgO) and [001](anatase)//[100](MgO). The rho scan X-ray diffraction measurements verified that epitaxy was still obtained at adeposition temperature of 375 degrees C. This deposition temperature is considerable lower than those commonly applied to realize heteroepitaxy of titanium oxide films. (C) 2000 The Electrochemical Society. S0013-4651(00)01-073-9. All rights reserved.

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Documento generato il 28/11/20 alle ore 12:05:03