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Titolo: Scanning tunneling spectroscopy on the 6H-SiC(0001)(3 x 3) surface
Autore: Gasparov, VA; Riehl-Chudoba, M; Schroter, B; Richter, W;
- Indirizzi:
- Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia Russian Acad Sci Chernogolovka Moscow District Russia 142432 rict, Russia Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany
- Titolo Testata:
- EUROPHYSICS LETTERS
fascicolo: 5,
volume: 51,
anno: 2000,
pagine: 527 - 533
- SICI:
- 0295-5075(200009)51:5<527:STSOT6>2.0.ZU;2-Y
- Fonte:
- ISI
- Lingua:
- ENG
- Soggetto:
- ELECTRONIC-STRUCTURE; RECONSTRUCTION; MICROSCOPY; STATE;
- Tipo documento:
- Article
- Natura:
- Periodico
- Settore Disciplinare:
- Physical, Chemical & Earth Sciences
- Citazioni:
- 27
- Recensione:
- Indirizzi per estratti:
- Indirizzo: Gasparov, VA Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia Russian Acad Sci Chernogolovka Moscow District Russia 142432
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- Citazione:
- V.A. Gasparov et al., "Scanning tunneling spectroscopy on the 6H-SiC(0001)(3 x 3) surface", EUROPH LETT, 51(5), 2000, pp. 527-533
Abstract
Surface topographic (STM) and spectroscopic (STS) studies have been performed on the Si-terminated 6H-SiC(0001)(3 x 3) surface using a scanning tunneling microscope (STM) in ultrahigh vacuum. High-quality (3 x 3) overstructures have been prepared as observed by LEED and STM. The regular (3 x 3) surface sites revealed much weaker I(V) dependences as compared to the defect sites when measured using the constant tip-surface gap technique. The normalized (dI/dV)/(I/V) vs. V spectra exhibit distinct bands of empty and filled states, which are separated by 1.2 eV for both surface sites, respectively. The results thereby support a Mott-Hubbard-type model as used for the calculation of the density of states. However, the STS spectra become completely featureless in the range of small tip-surface distances and reveal a "metallic"-like Ohmic I-V dependence.
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Documento generato il 23/01/21 alle ore 03:41:45