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Titolo:
THICKNESS PROFILES OF THIN-FILMS CAUSED BY SECONDARY REACTIONS IN FLOW-TYPE ATOMIC LAYER DEPOSITION REACTORS
Autore:
SIIMON H; AARIK J;
Indirizzi:
TARTU STATE UNIV,INST MAT SCI,ULIKOOLI 18 EE-2400 TARTU ESTONIA
Titolo Testata:
Journal of physics. D, Applied physics
fascicolo: 12, volume: 30, anno: 1997,
pagine: 1725 - 1728
SICI:
0022-3727(1997)30:12<1725:TPOTCB>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
EPITAXY GROWTH; MORPHOLOGY; PRECURSOR;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
H. Siimon e J. Aarik, "THICKNESS PROFILES OF THIN-FILMS CAUSED BY SECONDARY REACTIONS IN FLOW-TYPE ATOMIC LAYER DEPOSITION REACTORS", Journal of physics. D, Applied physics, 30(12), 1997, pp. 1725-1728

Abstract

The secondary reaction of HCl with the growing metal oxide surface during atomic layer deposition from a metal chloride and water is investigated using model calculations. HCl released during chemisorption of a metal chloride occupies adsorption sites for the metal chloride which results in a decrease in the film thickness in the gas-flow direction. The calculation model based on the continuity equation and kinetic equations for the surface coverage is described. The dependences of the thickness profile on the reactivity of HCl and on the adsorption of the metal chloride are analysed.

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Documento generato il 04/12/20 alle ore 19:25:37