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Titolo:
Visible light emission from GaAs nanocrystals in SiO2 films fabricated by sequential ion implantation
Autore:
Kanemitsu, Y; Tanaka, H; Fukunishi, Y; Kushida, T; Min, KS; Atwater, HA;
Indirizzi:
Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan Nara Inst Sci & Technol Nara Japan 6300101 Mat Sci, Nara 6300101, Japan CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA CALTECH Pasadena CA USA 91125 atson Lab Appl Phys, Pasadena, CA 91125 USA
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 8, volume: 62, anno: 2000,
pagine: 5100 - 5108
SICI:
0163-1829(20000815)62:8<5100:VLEFGN>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTOR QUANTUM DOTS; III-V SEMICONDUCTORS; POROUS-SILICON; RADIATIVE DECAY; SIZE DEPENDENCE; ATOMIC-HYDROGEN; BEAM SYNTHESIS; EXCITON; PHOTOLUMINESCENCE; LUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
50
Recensione:
Indirizzi per estratti:
Indirizzo: Kanemitsu, Y Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan Nara Inst Sci & Technol Nara Japan 6300101 a 6300101, Japan
Citazione:
Y. Kanemitsu et al., "Visible light emission from GaAs nanocrystals in SiO2 films fabricated by sequential ion implantation", PHYS REV B, 62(8), 2000, pp. 5100-5108

Abstract

We have studied the mechanism of visible photoluminescence (PL) in GaAs nanocrystals in SiO2 matrices formed by sequential ion implantation and thermal annealing. GaAs nanocrystal samples with the average diameter of similarto 6 nm show a broad PL in the red spectral region. The PL peak energy of GaAs nanocrystals is blueshifted from that of the bulk GaAs crystal. Under resonant excitation at energies within the red PL band, the fine structuresrelated to the LO phonon of the GaAs crystal are clearly observed in the PL spectrum at low temperatures. The excitation energy dependence of resonantly excited PL spectra shows that there are two different components of GaAs-related luminescence. In addition, in persistent luminescence hole-burning spectra, a pronounced hole is observed at the energy of the burning laser. The hole burnt in the luminescence spectrum has two structures related tothe zero-phonon-line emission and the one-LO-phonon-assisted emission of delocalized excitons in GaAs nanocrystals. From resonantly excited PL spectra and luminescence hole-burning spectra, it is concluded that visible luminescence comes from both delocalized excitons and excitons bound to impurities in quantum-confined Galls nanocrystals.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 14:54:41