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Titolo:
Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system
Autore:
Kim, GB; Kwak, JS; Baik, HK; Lee, SM; Oh, SH; Park, CG;
Indirizzi:
Yonsei Univ, Dept Engn Met, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 Engn Met, Seoul 120749, South Korea Kangweon Natl Univ, Dept Adv Mat Sci & Engn, Chunchon 200701, South Korea Kangweon Natl Univ Chunchon South Korea 200701 nchon 200701, South Korea POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea POSTECH Pohang South Korea 790784 Sci & Engn, Pohang 790784, South Korea
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 10, volume: 77, anno: 2000,
pagine: 1443 - 1445
SICI:
0003-6951(20000904)77:10<1443:ROCACL>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
EPITAXIAL COSI2; MU-M; OXIDE; SILICIDES; SILICON; FILM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, GB Yonsei Univ, Dept Engn Met, Seoul 120749, South Korea Yonsei UnivSeoul South Korea 120749 , Seoul 120749, South Korea
Citazione:
G.B. Kim et al., "Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system", APPL PHYS L, 77(10), 2000, pp. 1443-1445

Abstract

The role of the reaction between the capping layer and Co on the crystalline nature of CoSi2 films in refractory metal-capped Si/SiOx/Co system has been investigated. The epitaxial CoSi2 film was obtained in the capping layers (Ti, Zr) with high tendency of mixing between Co and the capping layer. Amorphous Ti-Co layer was produced at 450 degrees C, and its thickness was increased at 550 degrees C. The formation of amorphous Ti-Co layer during low-temperature annealing may be responsible for the formation of epitaxial CoSi2. Meanwhile, the polycrystalline CoSi2 was formed in the capping layer(Cr, Mo) with low tendency of mixing. These results can be explained by the fact that the mixing layer formed from the reaction between Co and refractory metal control the Co diffusion to the Si substrate as well as the thinSiOx between Co and Si. (C) 2000 American Institute of Physics. [S0003-6951(00)00936-0].

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Documento generato il 13/07/20 alle ore 17:49:59