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Titolo:
Semiconductor nanowires: synthesis, structure and properties
Autore:
Lee, ST; Wang, N; Lee, CS;
Indirizzi:
City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China City Univ Hong Kong Hong Kong Hong Kong Peoples R China Peoples R China City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China City Univ Hong Kong Hong Kong Hong Kong Peoples R China Peoples R China
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
fascicolo: 1, volume: 286, anno: 2000,
pagine: 16 - 23
SICI:
0921-5093(20000630)286:1<16:SNSSAP>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
LASER-ABLATION; SI NANOWIRES; HIGH-TEMPERATURE; SILICON MONOXIDE; GROWTH; MICROSCOPY; EMISSION; OXIDE;
Keywords:
silicon; nanowire; electron microscopy; nanostructured materials;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
28
Recensione:
Indirizzi per estratti:
Indirizzo: Lee, ST City Univ Hong Kong, Ctr Super Diamond & Adv Films, 83 Tat Chee Ave, Hong Kong, Hong Kong, Peoples R China City Univ Hong Kong 83 Tat Chee Ave Hong Kong Hong Kong Peoples R China
Citazione:
S.T. Lee et al., "Semiconductor nanowires: synthesis, structure and properties", MAT SCI E A, 286(1), 2000, pp. 16-23

Abstract

Highly pure, ultra long and uniform-sized semiconductor nanowires in bulk-quantity have been synthesized by novel methods of laser ablation and thermal evaporation of semiconductor powders mixed with metal or oxide catalysts. Transmission electron microscopic study shows that decomposition of semiconductor sub-oxides and the defect structure play an important role in enhancing the formation and growth of high-quality semiconductor nanowires. Themorphology, microstructure, optical and electrical properties of the nanowires have been characterized systematically by Raman scattering, photoluminescence and field emission. A new growth mechanism, namely oxide-assisted growth, is proposed based on the microstructure and different morphologies of the nanowires observed. (C) 2000 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 23:49:12