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Titolo:
Mosaic structure of various oriented grains in CoSi2/Si(001)
Autore:
Kang, TS; Je, JH; Kim, GB; Baik, HK; Lee, SM;
Indirizzi:
POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea POSTECH Pohang South Korea 790784 Sci & Engn, Pohang 790784, South Korea Yonsei Univ, Dept Engn Met, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 Engn Met, Seoul 120749, South Korea Kangweon Natl Univ, Dept Mat Engn, Chunchon, South Korea Kangweon Natl Univ Chunchon South Korea Mat Engn, Chunchon, South Korea
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 4, volume: 18, anno: 2000,
pagine: 1953 - 1956
SICI:
1071-1023(200007/08)18:4<1953:MSOVOG>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
001 SILICON; COSI2; GROWTH; HETEROEPITAXY; INSITU; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Je, JH POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea POSTECH Pohang South Korea 790784 ngn, Pohang 790784, South Korea
Citazione:
T.S. Kang et al., "Mosaic structure of various oriented grains in CoSi2/Si(001)", J VAC SCI B, 18(4), 2000, pp. 1953-1956

Abstract

We investigated the mosaic structure of CoSi2/Si(001) film in a synchrotron x-ray scattering experiment. The CoSi2 film, formed by thermal reaction of a 120 Angstrom Co film on Si(001), was composed largely of epitaxial grains of various orientations. In particular, the twin oriented (B-type) CoSi2(111) grains were grown epitaxially on the Si(lll) facets that were generated during annealing. Two distinct mosaic structures were observed in the CoSi2 grains; the epitaxial grains of the same orientation with the Si substrate, such as the CoSi2(001) [the CoSi2(111)] grains lying on the Si(001) [the Si(lll) facets], showed a small mosaicity of similar to 0.5 degrees fullwidth at half maximum (FWHM), while those of different orientations demonstrated a rather broad mosaicity of similar to 2.5 degrees FWHM. We attributed the smaller mosaicity of the epitaxial grains of the same orientation tothe reduced interfacial energy due to higher coincidence site density. (C)2000 American Vacuum Society. [S0734-2101(00)03403-7].

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 15/07/20 alle ore 14:33:39