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Titolo:
Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes
Autore:
Monroy, E; Calle, F; Pau, JL; Sanchez, FJ; Munoz, E; Omnes, F; Beaumont, B; Gibart, P;
Indirizzi:
Univ Politecn Madrid, ETSI Telecommun, Dept Ingn Elect, E-28040 Madrid, Spain Univ Politecn Madrid Madrid Spain E-28040 n Elect, E-28040 Madrid, Spain CNRS, CRHEA, F-06560 Valbonne, France CNRS Valbonne France F-06560CNRS, CRHEA, F-06560 Valbonne, France
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 4, volume: 88, anno: 2000,
pagine: 2081 - 2091
SICI:
0021-8979(20000815)88:4<2081:AAMOAS>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
P-I-N; BAND-GAP; ULTRAVIOLET DETECTION; HIGH-SPEED; ALGAN; DIODES; ALLOYS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
47
Recensione:
Indirizzi per estratti:
Indirizzo: Monroy, E Univ Politecn Madrid, ETSI Telecommun, Dept Ingn Elect, E-28040 Madrid, Spain Univ Politecn Madrid Madrid Spain E-28040 -28040 Madrid, Spain
Citazione:
E. Monroy et al., "Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes", J APPL PHYS, 88(4), 2000, pp. 2081-2091

Abstract

Schottky barrier photovoltaic detectors have been fabricated on n-AlxGa1-xN(0 less than or equal to x less than or equal to 0.35) and p-GaN epitaxiallayers grown on sapphire. Their characteristics have been analyzed and modeled, in order to determine the physical mechanisms that limit their performance. The influence of material properties on device parameters is discussed. Our analysis considers front and back illumination and distinguishes between devices fabricated on ideal high-quality material and state-of-the-art heteroepitaxial AlxGa1-xN. In the former case, low doping levels are advisable to achieve high responsivity and a sharp spectral cutoff. The epitaxial layer should be thin (< 0.5 mu m) to optimize the ultraviolet/visible contrast. In present devices fabricated on heteroepitaxial AlxGa1-xN, the responsivity is limited by the diffusion length. In this case, thick AlxGa1-xNlayers are advisable, because the reduction in the dislocation density results in lower leakage currents, larger diffusion length, and higher responsivity. In order to improve bandwidth and responsivity, and to achieve good ohmic contacts, a moderate n-type doping level (similar to 10(18) cm(-3)) is recommended. (C) 2000 American Institute of Physics. [S0021-8979(00)03216-3].

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Documento generato il 25/01/20 alle ore 09:32:43