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Titolo:
Erasing mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable
Autore:
Chang, YY; Chou, LH;
Indirizzi:
Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan Natl Tsing Hua Univ Hsinchu Taiwan 300 t Sci & Engn, Hsinchu 300, Taiwan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 4A, volume: 39, anno: 2000,
pagine: L294 - L296
SICI:
0021-4922(20000401)39:4A<L294:EMOACD>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHANGE OPTICAL DISKS; SYSTEM;
Keywords:
Ag-In-Sb-Te; CD-RW; erasing mechanism; CD linear velocity; laser-induced crystallization;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Chang, YY Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan Natl Tsing Hua Univ Hsinchu Taiwan 300 gn, Hsinchu 300, Taiwan
Citazione:
Y.Y. Chang e L.H. Chou, "Erasing mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable", JPN J A P 2, 39(4A), 2000, pp. L294-L296

Abstract

The erasing mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable at CD 2X and CD 4X are studied by employing the transmission electron microscopy (TEM). The mechanisms of laser-induced crystallization vary with linear velocity as well as erase power. Under CD 2X recording, erasing is proceeded with nucleation and growth mechanism at low erase laser power. However, it isthe direct grain growth that controls the mechanism of erasing at higher erase power: Under CD 4X recording, the erasing is dominated by direct graingrowth originated from the interface between amorphous marks and their neighboring crystalline region, and the erase power determines the location where the grain growth begins.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 07:16:03