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Titolo:
Characteristics of interface-modified Josephson junctions fabricated undervarious etching conditions
Autore:
Horibe, M; Inagaki, Y; Yoshida, K; Matsuda, G; Hayashi, N; Fujimaki, A; Hayakawa, H;
Indirizzi:
Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ Nagoya Aichi Japan 4648603 a Ku, Nagoya, Aichi 4648603, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 4A, volume: 39, anno: 2000,
pagine: L284 - L287
SICI:
0021-4922(20000401)39:4A<L284:COIJJF>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
HIGH-T-C; BARRIER;
Keywords:
interlace modified junctions; accelerating voltage; etching time; XPS analysis;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Horibe, M Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan Nagoya Univ Furo Cho Nagoya Aichi Japan 4648603 i 4648603, Japan
Citazione:
M. Horibe et al., "Characteristics of interface-modified Josephson junctions fabricated undervarious etching conditions", JPN J A P 2, 39(4A), 2000, pp. L284-L287

Abstract

We have studied the influence of process parameters on electrical properties for interface-modified junctions (IMJs) based on YBa2Cu3Ox. Tunnel barriers are produced by an electron cyclotron resonance (ECR) plasma etching process and subsequent vacuum annealing. We have found that time and accelerating voltage (V-acc) in the etching sequence, in which the ramp-edge geometry is defined, are very important parameters for the barrier formation. Increasing the etching time and accelerating voltage lead to the reduction of critical current densities. By setting these parameters at appropriate values, we can control the critical current of the IMJs. We have also found that the IMJs with high junction resistance, which are fabricated at higher accelerating voltages above 700 V, have transport mechanisms via localized states for quasi particles. The X-ray photo spectroscopy analysis suggests that accelerating voltages above 700 V enhance the thickness of the barrier, while those below 700 V affect both barrier resistivity and thickness.

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Documento generato il 15/07/20 alle ore 08:10:26