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Titolo:
Effects of wet chemistry pre-gate clean strategies on the organic contamination of gate oxides for metal-oxide-semiconductor field effect transistor
Autore:
Guan, JJ; Gale, GW; Bennett, J;
Indirizzi:
Int SEMATECH, FEP Div, Surface Preparat Program, Austin, TX 78741 USA Int SEMATECH Austin TX USA 78741 e Preparat Program, Austin, TX 78741 USA SEMATECH, Mat Characterizat Grp, Austin, TX 78741 USA SEMATECH Austin TX USA 78741 Mat Characterizat Grp, Austin, TX 78741 USA
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 7A, volume: 39, anno: 2000,
pagine: 3947 - 3954
SICI:
0021-4922(200007)39:7A<3947:EOWCPC>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
IMPACT;
Keywords:
semiconductor; CMOS; gate oxide; gate stacks; surface preparation; wet chemistry; pre-gate cleaning; organic contamination; carbon contamination; TOF-SIMS; SIMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Guan, JJ Int SEMATECH, FEP Div, Surface Preparat Program, 2706 Montopolis Dr, Austin, TX 78741 USA Int SEMATECH 2706 Montopolis Dr Austin TX USA 78741 TX 78741 USA
Citazione:
J.J. Guan et al., "Effects of wet chemistry pre-gate clean strategies on the organic contamination of gate oxides for metal-oxide-semiconductor field effect transistor", JPN J A P 1, 39(7A), 2000, pp. 3947-3954

Abstract

II is known that organic contamination can seriously degrade the electrical performance of gate oxides for metal-oxide-semiconductor field effect transistor (MOSFET) applications. In this paper, organic contamination of wafer surfaces cleaned by different pre-gate clean conditions and subsequently exposed to cleanroom ambience was investigated using time-of-flight secondary ion mass spectroscopy (TOF-SIMS), and the carbon level from thermally decomposed organic species directly trapped in the gate oxides after thermal oxidation and polysilicon deposition was probed using secondary ion mass spectroscopy (SIMS) depth profiling. The C concentration in the oxide-polysilicon gate stack obtained from SIMS depth profiling closely correlates with the total TOF-SIMS peak intensity of organic contaminants detected on post clean wafer surfaces. A quantified carbon concentration on the order of 10(12) atoms/cm(2) was obtained at the interfaces using SIMS depth profiling calibrated with an implanted C standard. It was found that the susceptibility of wafer surfaces to organic contamination that eventually affects the level of oxide-polysilicon interfacial carbon appears to be highly dependent on the surface termination.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/01/21 alle ore 03:08:51