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Titolo:
Self assembling growth of triangular pyramidal ge islands on a Si(111)-root 3 x root 3-R30 degrees-B surface phase
Autore:
Schulze, J; Stimpel, T; Baumgartner, H; Eisele, I;
Indirizzi:
Univ Bunderswehr Munchen, Inst Phys, D-85577 Neubiberg, Germany Univ Bunderswehr Munchen Neubiberg Germany D-85577 77 Neubiberg, Germany
Titolo Testata:
APPLIED SURFACE SCIENCE
, volume: 162, anno: 2000,
pagine: 332 - 339
SICI:
0169-4332(200008)162:<332:SAGOTP>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
SI(111)ROOT-3X-ROOT-3-B SURFACE; SI OVERGROWTH; BORON; DEVICES; SI(100); SILICON;
Keywords:
B surface phase (BSP); Ge dots; Si/Ge molecular beam epitaxy (MBE); atomic force microscopy (AFM); scanning tunneling microscopy (STM);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Schulze, J Univ Bunderswehr Munchen, Inst Phys, Werner Heisenberg Weg 39, D-85577 Neubiberg, Germany Univ Bunderswehr Munchen Werner Heisenberg Weg 39 Neubiberg Germany D-85577
Citazione:
J. Schulze et al., "Self assembling growth of triangular pyramidal ge islands on a Si(111)-root 3 x root 3-R30 degrees-B surface phase", APPL SURF S, 162, 2000, pp. 332-339

Abstract

Due to the crystallographic identity of Si and Ge, a very interesting system for the preparation of quantum dot arrays is a Ge deposition on top of acleaned Si surface. The critical thickness for relaxation of the Ge layer on Si amounts to < 2 nm caused by the lattice mismatch. Therefore, Ge quantum dots on Si are very small, strained, and generally statistically distributed over the Si substrate. We will show that the Si(111)- root 3 X-root 30 degrees-B surface phase (BSP), a two-dimensional superlattice of B atoms on top a of Si(lll) substrate deposited between Si and Ge, has the potential to overcome this problem by completely passivating the Si dangling bonds and, therefore, acting as a lubricant between the Si substrate and the epitaxially grown Ge atoms. In general, we will discuss a step-by-step growth model for Ge epitaxy on BSPs,depending on B concentration, degree of misalignment of the Si surface, and growth temperature using atomic force microscopy (AFM) and scanning tunneling microscopy (STM) studies of samples prepared by molecular beam epitaxy(MBE). (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 05/12/20 alle ore 00:14:20