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Titolo:
Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy
Autore:
Onabe, K; Wu, J; Katayama, R; Zhao, FH; Nagayama, A; Shiraki, Y;
Indirizzi:
Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan Univ Tokyo Tokyo Japan 1138656 ppl Phys, Bunkyo Ku, Tokyo 1138656, Japan Japan Radio Co Ltd, Saitama Lab, Kamifukuoka, Saitama 3560011, Japan JapanRadio Co Ltd Kamifukuoka Saitama Japan 3560011 itama 3560011, Japan Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan Univ Tokyo Tokyo Japan 1538904 Res Ctr, Meguro Ku, Tokyo 1538904, Japan
Titolo Testata:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
fascicolo: 1, volume: 180, anno: 2000,
pagine: 15 - 19
SICI:
0031-8965(20000716)180:1<15:CGFOG(>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
STIMULATED-EMISSION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Onabe, K Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan Univ Tokyo 7-3-1 Hongo Tokyo Japan 1138656 Tokyo 1138656, Japan
Citazione:
K. Onabe et al., "Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy", PHYS ST S-A, 180(1), 2000, pp. 15-19

Abstract

Cubic GaN films on GaAs (001) substrates which show a low-temperature photoluminescence (PL) without the deep-level orange (2.0 to 2.1 eV) band were grown by metalorganic vapor phase epitaxy (MOVPE). The orange luminescence recovers its relative intensity at room temperature, though the dominance of band-edge free exciton is still significant. The surface morphology was much smoother and the inclusion of hexagonal phase was much reduced for the samples with the suppressed orange band. It is suggested that the role of the GaN buffer layer is very essential in the optimized growth for high optical quality films, providing a flat cubic structure template as well as avoiding thermal damage of GaAs surface at high temperatures.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 11:02:52