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Titolo:
Performance of new E-beam lithography system JBX-9300FS
Autore:
Takemura, H; Ohki, H; Nakazawa, H; Nakagawa, Y; Isobe, M; Ochiai, Y; Ogura, T; Narihiro, M; Mogami, T;
Indirizzi:
JEOL Ltd, Div Semicond Equipment, Akishima, Tokyo 1968558, Japan JEOL LtdAkishima Tokyo Japan 1968558 ent, Akishima, Tokyo 1968558, Japan NEC Corp Ltd, Silicon Syst Res Labs, Sagamihara, Kanagawa 2291198, Japan NEC Corp Ltd Sagamihara Kanagawa Japan 2291198 a, Kanagawa 2291198, Japan
Titolo Testata:
MICROELECTRONIC ENGINEERING
fascicolo: 1-4, volume: 53, anno: 2000,
pagine: 329 - 332
SICI:
0167-9317(200006)53:1-4<329:PONELS>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
5
Recensione:
Indirizzi per estratti:
Indirizzo: Takemura, H JEOL Ltd, Div Semicond Equipment, 1-2 Musashino 3 Chome, Akishima, Tokyo 1968558, Japan JEOL Ltd 1-2 Musashino 3 Chome Akishima Tokyo Japan 1968558 an
Citazione:
H. Takemura et al., "Performance of new E-beam lithography system JBX-9300FS", MICROEL ENG, 53(1-4), 2000, pp. 329-332

Abstract

New electron beam lithography system, JBX-9300FS, was developed and evaluated. This system features a spot beam, vector beam-scanning system, and step and repeats stage. Minimum beam diameter is 4nm at 100kV and 7nm at 50kV. The beam scanning system incorporates a new 20-bit high resolution-high speed Digital to Analog converter and voltage amplifier (DAC/AMP). Maximum writing field sizes of scanning system are 0.5mm at 100kV with an address size of 1nm and 1.0mm at 50kV with an address size of 2nm. The maximum beam-scanning rate is 25MHz. The system features are a maximum writing area of 230mm square, and handling of 300mm wafers. It also achieves a stitching accuracy and an overlay accuracy of +/-20nm, and a positional accuracy of +/-25nm at an accelerating voltage of 50kV, which exceeded the specifications. This system is used for sub-0.1 mu m gate CMOS device development. Chemicallyamplified resists, NEB22A3 and UV5 are successfully used for making of 30-nm-width line patterns and 100-nm-diameter via-hole pattern, respectively.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/04/20 alle ore 05:43:16