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Titolo:
Self-organized quantum dot formation by ion sputtering
Autore:
Facsko, S; Dekorsy, T; Trappe, C; Kurz, H;
Indirizzi:
Rhein Westfal TH Klinikum, Inst Semicond Elect, D-52074 Aachen, Germany Rhein Westfal TH Klinikum Aachen Germany D-52074 D-52074 Aachen, Germany
Titolo Testata:
MICROELECTRONIC ENGINEERING
fascicolo: 1-4, volume: 53, anno: 2000,
pagine: 245 - 248
SICI:
0167-9317(200006)53:1-4<245:SQDFBI>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROUGHENING INSTABILITY; RIPPLE MORPHOLOGY; SURFACE; EVOLUTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Facsko, S Rhein Westfal TH Klinikum, Inst Semicond Elect, Sommerfeldstr 24, D-52074 Aachen, Germany Rhein Westfal TH Klinikum Sommerfeldstr 24 Aachen Germany D-52074
Citazione:
S. Facsko et al., "Self-organized quantum dot formation by ion sputtering", MICROEL ENG, 53(1-4), 2000, pp. 245-248

Abstract

Key requirements for the fabrication of semiconductor quantum dots (QD) are their size, size distribution and density. Beyond conventional lithography methods self-organization processes are promising for the realization of QDs. We present a new route for the generation of quantum dots, which in contrast to epitaxial growth is a subtractive self-organized and self-orderedmethod. It is based on a surface instability induced by low energy and normal incidence ion bombardment of semiconductor surfaces. Uniform crystalline islands with dimensions as small as 15 nm and densities up to 10(11) cm(-2) are formed by a cooperative process on the surface of semiconductors during continuous ion sputtering.

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Documento generato il 27/11/20 alle ore 02:09:58