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Titolo:
Experimental investigation and thermodynamic description of the constitution of the ternary system Cr-Si-C
Autore:
Du, Y; Schuster, JC; Perring, L;
Indirizzi:
Univ Vienna, Inst Phys Chem, A-1090 Vienna, Austria Univ Vienna Vienna Austria A-1090 Inst Phys Chem, A-1090 Vienna, Austria Univ Lausanne, Inst Chim Minerale & Analyt, CH-1015 Lausanne, Switzerland Univ Lausanne Lausanne Switzerland CH-1015 CH-1015 Lausanne, Switzerland
Titolo Testata:
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
fascicolo: 8, volume: 83, anno: 2000,
pagine: 2067 - 2073
SICI:
0002-7820(200008)83:8<2067:EIATDO>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
EQUILIBRIA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Du, Y Univ Vienna, Inst Phys Chem, Wahringerstr 42, A-1090 Vienna, AustriaUniv Vienna Wahringerstr 42 Vienna Austria A-1090 0 Vienna, Austria
Citazione:
Y. Du et al., "Experimental investigation and thermodynamic description of the constitution of the ternary system Cr-Si-C", J AM CERAM, 83(8), 2000, pp. 2067-2073

Abstract

The constitution of the ternary system Cr-Si-C is investigated using differential thermal analysis and X-ray diffractometry techniques. Eight invariant reaction temperatures involving the liquid phase are determined, The crystal structures and phase partitions observed for the subsolidus temperature region confirm literature data. Thermodynamic modeling, using a minimum of adjustable ternary parameters and assuming the binary high-temperature phase, P-Cr5Si3, to be stabilized toward lower temperatures as ternary D8(8)-type Cr5Si3Cx, generally reproduces the measured temperatures within 10 K, The calculated liquidus surface contains four ternary eutectics, three transition reactions, three degenerated reactions, and five (pseudobinary entectics) maxima. The reaction scheme shows that no solid-phase reactions occurin the Cr-Si-C system at >1000 degrees C, except for the binary transitionbeta-Cr5Si3 <- -> alpha-Cr5Si3. The activity diagram along the section Cr-SiC at 1300 degrees C, computed from the optimized data set, agrees with the observed diffusion path.

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Documento generato il 03/12/20 alle ore 12:50:29