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Titolo:
SILAR deposition of CdxZn1-xS thin films
Autore:
Laukaitis, G; Lindroos, S; Tamulevicius, S; Leskela, M; Rackaitis, M;
Indirizzi:
Kaunas Univ Technol, Dept Phys, LT-3031 Kaunas, Lithuania Kaunas Univ Technol Kaunas Lithuania LT-3031 , LT-3031 Kaunas, Lithuania Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Kaunas Univ Technol, Sci Ctr Microsyst & Nanotechnol, LT-3031 Kaunas, Lithuania Kaunas Univ Technol Kaunas Lithuania LT-3031 , LT-3031 Kaunas, Lithuania
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 3-4, volume: 161, anno: 2000,
pagine: 396 - 405
SICI:
0169-4332(200007)161:3-4<396:SDOCTF>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
IONIC-LAYER ADSORPTION; ATOMIC-FORCE MICROSCOPY; HETEROJUNCTION SOLAR-CELLS; ZINC-SULFIDE FILMS; OPTICAL-PROPERTIES; ZNXCD1-XS FILMS; DIP TECHNIQUE; GROWTH; ZNS; CDS;
Keywords:
residual stress; thin films; SILAR; CdxZn1-xS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
57
Recensione:
Indirizzi per estratti:
Indirizzo: Laukaitis, G Kaunas Univ Technol, Dept Phys, Studentry Str 50, LT-3031 Kaunas, Lithuania Kaunas Univ Technol Studentry Str 50 Kaunas Lithuania LT-3031
Citazione:
G. Laukaitis et al., "SILAR deposition of CdxZn1-xS thin films", APPL SURF S, 161(3-4), 2000, pp. 396-405

Abstract

CdxZn1-xS thin films were grown on (100)GaAs by the successive ionic layeradsorption and reaction (SILAR) technique from dilute aqueous precursor solutions. Crystallinity, refractive index and morphology of the thin films were studied as a function of composition and thickness of the films. The CdxZn1-xS films were polycrystalline and cubic. The crystallite size and refractive index of the films increased when the film thickness and Cd concentration in the CdxZn1-xS thin films increased. It was found that tensile stress dominates in thin films when Cd concentration is lower than x less than or equal to 0.54 and the change of the residual stress to the compressive one takes place after that. Correlation between the growth mode and residualstress is demonstrated. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 12/07/20 alle ore 11:41:11