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Titolo:
Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process
Autore:
Aarik, J; Aidla, A; Uustare, T; Ritala, M; Leskela, M;
Indirizzi:
Univ Tartu, Inst Mat Sci, EE-50090 Tartu, Estonia Univ Tartu Tartu Estonia EE-50090 Inst Mat Sci, EE-50090 Tartu, Estonia Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 3-4, volume: 161, anno: 2000,
pagine: 385 - 395
SICI:
0169-4332(200007)161:3-4<385:TIAAPF>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; OXIDE THIN-FILMS; EPITAXY; TIO2; TETRAISOPROPOXIDE; FABRICATION; KINETICS; TIN; GAS;
Keywords:
atomic layer deposition; thin films; titanium oxide; adsorption kinetics;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Aarik, J Univ Tartu, Inst Mat Sci, 18 Ulikooli St, EE-50090 Tartu, EstoniaUniv Tartu 18 Ulikooli St Tartu Estonia EE-50090 Tartu, Estonia
Citazione:
J. Aarik et al., "Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process", APPL SURF S, 161(3-4), 2000, pp. 385-395

Abstract

Atomic layer deposition (ALD) of titanium oxide from titanium isopropoxide(Ti(OCH(CH,),),) and water as well as from Ti(OCH(CH3)(2))(4) and hydrogenperoxide (H2O2) was studied. According to data of real-time quartz crystalmicrobalance (QCM) measurements, adsorption of Ti(OCH(CH,),), was a self-limited process at substrate temperatures 100-250 degrees C. At 200-250 degrees C, the growth rate was independent of whether water or H2O2 was used asthe oxygen precursor. Insufficient reactivity of water vapor hindered the film growth at temperatures 100-150 degrees C. Incomplete removal of the precursor ligands from solid surface by water pulse was revealed as the main reason for limited deposition rate. The growth rate increased significantlyand reached 0.12 nm per cycle at 100 degrees C when water was replaced with H2O2. The carbon contamination did not exceed 1 at.% and the refractive index was 2.3 in the films grown at temperatures as low as 100 degrees C. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 22/10/20 alle ore 02:21:37