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Titolo:
Large crystalline grain growth using current-induced Joule heating
Autore:
Sameshima, T; Ozaki, K; Andoh, N;
Indirizzi:
Tokyo Univ Agr & Technol, Tokyo 1848588, Japan Tokyo Univ Agr & Technol Tokyo Japan 1848588 chnol, Tokyo 1848588, Japan
Titolo Testata:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
fascicolo: 1, volume: 71, anno: 2000,
pagine: 1 - 6
SICI:
0947-8396(200007)71:1<1:LCGGUC>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLY-SI TFTS; SILICON FILMS; LASER; VAPOR; CVD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Sameshima, T Tokyo Univ Agr & Technol, Tokyo 1848588, Japan Tokyo Univ Agr& Technol Tokyo Japan 1848588 1848588, Japan
Citazione:
T. Sameshima et al., "Large crystalline grain growth using current-induced Joule heating", APPL PHYS A, 71(1), 2000, pp. 1-6

Abstract

Electrical-current-induced Joule heating was applied to crystallization of60-nm-thick amorphous silicon films formed on glass substrates. 3-mu s-pulsed voltages were applied to silicon films connected with a capacitance in parallel. Coincident irradiation with 28-ns-pulsed excimer laser melted films partially and reduced its resistance. Complete melting for 12 mu s and alow cooling rate at 1.1 x 10(8) K/s were achieved by Joule heating from electrical energy accumulated in the capacitance at 0.22 mu F. For 7.4 x 10(17) cm(-3) phosphorus-doped films, analysis of temperature change in the electrical conductivity gave that the density of defect states localized at grain boundaries was 1.5 x 10(12) cm(-2) Formation of 3.5-mu m-long crystalline grains was observed by transmission electron micrograph. Preferential crystalline orientation was (110). PACS: 61.50.-f; 72.20.-I, 73.20.Hb; 61.16.Bg; 73.50.Gr.

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Documento generato il 04/12/20 alle ore 12:39:02