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Titolo:
Structural and electronic properties of the Sn/Si(111)root 3x root 3R30 degrees surface
Autore:
Profeta, G; Continenza, A; Ottaviano, L; Mannstadt, W; Freeman, AJ;
Indirizzi:
Univ Aquila, Dipartimento Fis, Ist Nazl Fis Mat, I-67010 Coppito, Laquila,Italy Univ Aquila Coppito Laquila Italy I-67010 I-67010 Coppito, Laquila,Italy Univ Marburg, Fachbereich Phys, D-35037 Marburg, Germany Univ Marburg Marburg Germany D-35037 eich Phys, D-35037 Marburg, Germany Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA NorthwesternUniv Evanston IL USA 60208 & Astron, Evanston, IL 60208 USA Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA Northwestern Univ Evanston IL USA 60208 t Res Ctr, Evanston, IL 60208 USA
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 3, volume: 62, anno: 2000,
pagine: 1556 - 1559
SICI:
0163-1829(20000715)62:3<1556:SAEPOT>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHARGE-DENSITY-WAVE; PHASE-TRANSITION; ALPHA-PHASE; RECONSTRUCTIONS; SN/GE(111);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Profeta, G Univ Aquila, Dipartimento Fis, Ist Nazl Fis Mat, I-67010 Coppito, Laquila,Italy Univ Aquila Coppito Laquila Italy I-67010 ppito, Laquila,Italy
Citazione:
G. Profeta et al., "Structural and electronic properties of the Sn/Si(111)root 3x root 3R30 degrees surface", PHYS REV B, 62(3), 2000, pp. 1556-1559

Abstract

The structural and electronic properties of the Sn/Si(111)root 3x root 3 surface are determined by means of all-electron local density full-potentialaugmented plane wave thin film calculations. We find strong similarities with the more extensively studied isolectronic systems (Sn/Ge and Pb/Ge) as far as the relaxed structure and the electronic properties are concerned. In analogy with these systems, we find, within the local density approximation (LDA), two surface states weakly dispersed in the Brillouin zone which are responsible for the hexagonal patterns observed in scanning tunneling microscopy (STM) experiments. When our calculated results, including STM images, are compared with available structural data and STM images, we find that the LDA predictions well reproduce the electron distribution at the surface and the structural properties, leading to a complete description of thissystem at room temperature.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/11/20 alle ore 10:04:59