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Titolo:
Current-induced joule heating used to crystallize silicon thin films
Autore:
Sameshima, T; Ozaki, K;
Indirizzi:
Tokyo Univ Agr & Technol, Tokyo 1848588, Japan Tokyo Univ Agr & Technol Tokyo Japan 1848588 chnol, Tokyo 1848588, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 7A, volume: 39, anno: 2000,
pagine: L651 - L654
SICI:
0021-4922(20000701)39:7A<L651:CJHUTC>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLY-SI TFTS; CHEMICAL-VAPOR-DEPOSITION; LASER; TRANSPORT; CVD;
Keywords:
joule heating; melt duration; cooling rate; electrical conductivity; grain boundary;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Sameshima, T Tokyo Univ Agr & Technol, 2-24-16 Nakamachi, Tokyo 1848588, Japan Tokyo Univ Agr & Technol 2-24-16 Nakamachi Tokyo Japan 1848588
Citazione:
T. Sameshima e K. Ozaki, "Current-induced joule heating used to crystallize silicon thin films", JPN J A P 2, 39(7A), 2000, pp. L651-L654

Abstract

Electrical-current-induced joule heating was applied to the crystallization of 60-nm-thick amorphous silicon films formed on glass substrates. Three-mu s-pulsed voltages were applied to silicon films connected with a capacitance in parallel. Coincident irradiation with a 28-ns-pulsed excimer laser melted films partially and reduced their resistance. Complete melting for 12 mu s and a low cooling rate of 1.1 x 10(8) K/s were achieved by joule heating from electrical energy that accumulated at a capacitance of 0.22 mu F. The analysis of electrical conductivity suggested a density of defect states of 1.5 x 10(12) cm(-2) at grain boundaries. The formation of 3.5-mu m-long crystalline grains was observed using a transmission electron microscope. The preferential crystalline orientation was (110).

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Documento generato il 01/12/20 alle ore 07:08:21