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Titolo:
Enhancement of open circuit voltage via light soaking in amorphous siliconsolar cells
Autore:
Isomura, M; Kondo, M; Matsuda, A;
Indirizzi:
Electrotech Lab, Thin Film Silicon Solar Cells Super Lab, Ibaraki, Osaka 3058568, Japan Electrotech Lab Ibaraki Osaka Japan 3058568 Ibaraki, Osaka 3058568, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 6A, volume: 39, anno: 2000,
pagine: 3339 - 3343
SICI:
0021-4922(200006)39:6A<3339:EOOCVV>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
DILUTION;
Keywords:
amorphous silicon; solar cell; open circuit voltage; hydrogen dilution; light soaking;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Isomura, M Sanyo Elect Co Ltd, New Mat Res Ctr, 1-18-13 Hashiridani, Osaka5738534, Japan Sanyo Elect Co Ltd 1-18-13 Hashiridani Osaka Japan 5738534pan
Citazione:
M. Isomura et al., "Enhancement of open circuit voltage via light soaking in amorphous siliconsolar cells", JPN J A P 1, 39(6A), 2000, pp. 3339-3343

Abstract

The increase in open-circuit voltage (V-oc) due to light soaking was investigated in amorphous silicon solar cells. The light-induced increase in V-oc appears when i-layers are prepared in H-2-diluted plasma (H-2/SiH4 > 10). It is necessary that more than two-thirds of the i-layer thickness be formed under such hydrogen dilution. This phenomenon is not related to p/i interface effects but reflects the bulk properties of the dilution layer. The increase in V-oc is caused by the voltage shift of dark I-V characteristics. The change of V-oc is determined by the balance between the shift of dark current and the reduction of photocurrent due to the light-induced defects. The voltage shift suggests an increase in the diode barrier height of the pin junction; however, the increase in built-in potential in the active layers (i-layers) is not observed in our experiments. The advantage of this effect is seen with sufficiently thin i-layers, because conventional light-induced degradation is negligible. The increase in V-oc improves conversion efficiency by 2% after light soaking in the case of 500 Angstrom i-layers.

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Documento generato il 29/11/20 alle ore 06:05:54