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Titolo:
Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes
Autore:
Nagase, M; Suhara, M; Miyamoto, Y; Furuya, K;
Indirizzi:
Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan Tokyo Inst Technol Tokyo Japan 1528552 , Meguro Ku, Tokyo 1528552, Japan Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan Tokyo Inst Technol Tokyo Japan 1528552 , Meguro Ku, Tokyo 1528552, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 6A, volume: 39, anno: 2000,
pagine: 3314 - 3318
SICI:
0021-4922(200006)39:6A<3314:PWAOCC>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
SPACER LAYER;
Keywords:
triple-barrier structure; resonant tunneling diodes; structural inhomogeneity; organo metallic vapor phase epitaxy; GaInAs/InP;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Nagase, M Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan Tokyo Inst Technol 2-12-1 Ookayama Tokyo Japan 1528552 2, Japan
Citazione:
M. Nagase et al., "Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes", JPN J A P 1, 39(6A), 2000, pp. 3314-3318

Abstract

We studied the peak width of current vs voltage (I-V) characteristics of triple-barrier resonant tunneling diodes (TBRTDs) experimentally and theoretically. A GaInAs/InP TBRTD was fabricated by organo metallic vapor phase epitaxy (OMVPE). A theory of I-V characteristics of TBRTDs was developed by taking the structural inhomogeneity into account to explain the experimentalpeak width. The fluctuation of the well width in a TBRTD grown by OMVPE was estimated as two atomic layers.

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Documento generato il 29/11/20 alle ore 07:00:22