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Titolo:
Fabrication of silicon-based filiform-necked nanometric oscillators
Autore:
Saya, D; Fukushima, K; Toshiyoshi, H; Fujita, H; Hashiguchi, G; Kawakatsu, H;
Indirizzi:
Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan Univ Tokyo Tokyo Japan 1068558 Ind Sci, Minato Ku, Tokyo 1068558, Japan Kagawa Univ, Fac Engn, Takamatsu, Kagawa 7608526, Japan Kagawa Univ Takamatsu Kagawa Japan 7608526 kamatsu, Kagawa 7608526, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 6B, volume: 39, anno: 2000,
pagine: 3793 - 3798
SICI:
0021-4922(200006)39:6B<3793:FOSFNO>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
ATOMIC-FORCE MICROSCOPE; ULTRAHIGH DENSITY; ARRAYS; RANGE;
Keywords:
scanning force microscopy; atomic force microscopy; noncontact; nanocantilever; nanometric oscillator; SIMOX; SOI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Saya, D Univ Tokyo, Inst Ind Sci, Minato Ku, 7-22-1 Roppongi, Tokyo 1068558, Japan Univ Tokyo 7-22-1 Roppongi Tokyo Japan 1068558 kyo 1068558, Japan
Citazione:
D. Saya et al., "Fabrication of silicon-based filiform-necked nanometric oscillators", JPN J A P 1, 39(6B), 2000, pp. 3793-3798

Abstract

For the purpose of improving the resolution of force and mass detection ofa noncontact-mode atomic force microscope (AFM), we are developing a mechanical oscillator of nanometric size which consists of a head mass supportedby an elastic neck. A silicon-on-insulator (SOI) wafer with the laminated structure top Si layer/buried SiO2 layer/base Si is used in the fabricationof the nanometric oscillators. By selective etching of Si and SiO2, nanometric oscillators are successfully obtained. The top Si layer is etched to form a tetrahedral Si dot, which is the mass of the oscillator, and the buried SiO2 layer is etched to form the elastic neck resting on the base Si. The size of the tetrahedral Si dot is determined by the thickness of the top Si layer without depending on the precision of the Lithography technique. We found that the cross-sectional shape of the SiO2 neck is a right-angled triangle and that the neck is situated at the center of the tetrahedral Si dot. According to calculations, the oscillators we obtained have spring constants around 1 N/m and a resonance frequency from 3 MHz to 300MHz accordingto their dimensions.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 06:20:35