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Titolo:
Effects of ion irradiation on silicon oxidation in electron cyclotron resonance argon and oxygen mixed plasma
Autore:
Matsuo, S; Yamamoto, M; Sadoh, T; Tsurushima, T; Gao, DW; Furukawa, K; Nakashima, H;
Indirizzi:
Kyushu Univ, Dept Elect Device Engn, Fukuoka 8128581, Japan Kyushu Univ Fukuoka Japan 8128581 ct Device Engn, Fukuoka 8128581, Japan Kyushu Univ, Adv Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 , Kasuga, Fukuoka 8168580, Japan
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 3, volume: 88, anno: 2000,
pagine: 1664 - 1669
SICI:
0021-8979(20000801)88:3<1664:EOIIOS>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
LOW-TEMPERATURE; ROOM-TEMPERATURE; OXIDE-GROWTH; KINETICS; OZONE; ENHANCEMENT; ANODIZATION; SURFACE; MODEL; BIAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
33
Recensione:
Indirizzi per estratti:
Indirizzo: Matsuo, S Kyushu Univ, Dept Elect Device Engn, Fukuoka 8128581, Japan Kyushu Univ Fukuoka Japan 8128581 Engn, Fukuoka 8128581, Japan
Citazione:
S. Matsuo et al., "Effects of ion irradiation on silicon oxidation in electron cyclotron resonance argon and oxygen mixed plasma", J APPL PHYS, 88(3), 2000, pp. 1664-1669

Abstract

Effects of ion irradiation on oxidation of silicon at a temperature as lowas 130 degrees C in an argon and oxygen mixed plasma excited by electron cyclotron resonance interaction have been investigated. The growth rate of the oxide films increases with increasing incident energy and flux of argon ions, and the thickness increases proportionally to the root square of the oxidation time, which suggests that the growth rate is limited by diffusionof oxidants enhanced by irradiation with argon ions. Effects of substrate bias on the oxidation characteristics have been also investigated. The growth rate increases with increasing positive bias, and the growth kinetics deviate from diffusion limited with increasing thickness. The bias dependenceof the growth rate is caused by drift of negative oxidants enhanced by theelectric field established in the oxide films. Moreover, it is shown that the electrical properties of the oxide films are improved by applying positive substrate bias. The improvement is due to a reduction of irradiation-damage in the initial oxidation stage. On the basis of the experimental results, it is concluded that the reduction of the incident energy and the flux of argon ions in the initial oxidation stage is essential to improve electrical properties of the oxide films. (C) 2000 American Institute of Physics.[S0021-8979(00)05715-7].

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Documento generato il 23/01/21 alle ore 03:46:13