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Titolo:
Atomic layer deposition and chemical vapor deposition of tantalum oxide bysuccessive and simultaneous pulsing of tantalum ethoxide and tantalum chloride
Autore:
Kukli, K; Ritala, M; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia
Titolo Testata:
CHEMISTRY OF MATERIALS
fascicolo: 7, volume: 12, anno: 2000,
pagine: 1914 - 1920
SICI:
0897-4756(200007)12:7<1914:ALDACV>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS; EPITAXY GROWTH; TA(OC2H5)(5); SILICON; GELS; TIO2; H2O;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
30
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Univ Helsinki, Dept Chem, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 elsinki, Finland
Citazione:
K. Kukli et al., "Atomic layer deposition and chemical vapor deposition of tantalum oxide bysuccessive and simultaneous pulsing of tantalum ethoxide and tantalum chloride", CHEM MATER, 12(7), 2000, pp. 1914-1920

Abstract

Amorphous Ta2O5 films were grown by atomic layer deposition (ALD) or pulsed chemical vapor deposition (CVD) processes as a result of reactions between Ta(OC2H5)(5) and TaCl5. Pulses of evaporized Ta precursors were led into the reactor successively or simultaneously. H2O could be applied as a supplementary oxygen source, but the films could be grown also in a water-free process. Films were grown in the temperature range of 275-450 degrees C. Thegrowth rate of the films obtained by CVD using simultaneous pulsing of precursors exceeded 2.5 times that of the films obtained in the ALD process, where only one metal precursor was applied at a time. The refractive index and permittivity of the films increased with the growth temperature and frequency of Ta precursor pulses, approaching the values characteristic of the films obtained in the conventional ALD or CVD processes.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 14:12:51