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Titolo:
Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water
Autore:
Aarik, J; Aidla, A; Sammelselg, V; Uustare, T; Ritala, M; Leskela, M;
Indirizzi:
Univ Tartu, Inst Mat Sci, EE-50090 Tartu, Estonia Univ Tartu Tartu Estonia EE-50090 Inst Mat Sci, EE-50090 Tartu, Estonia Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia Univ Tartu Tartu Estonia EE-51014 tu, Inst Phys, EE-51014 Tartu, Estonia Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 370, anno: 2000,
pagine: 163 - 172
SICI:
0040-6090(20000717)370:1-2<163:COTDAL>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
TIO2 THIN-FILMS; EPITAXY GROWTH; DEPOSITION; THICKNESS; SURFACE;
Keywords:
atomic layer deposition; titanium dioxide; growth mechanism; surface roughness;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Aarik, J Univ Tartu, Inst Mat Sci, 18 Ulikooli St, EE-50090 Tartu, EstoniaUniv Tartu 18 Ulikooli St Tartu Estonia EE-50090 Tartu, Estonia
Citazione:
J. Aarik et al., "Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water", THIN SOL FI, 370(1-2), 2000, pp. 163-172

Abstract

Atomic layer growth of titanium dioxide from titanium ethoxide and water was studied. Real-time quartz crystal microbalance measurements revealed that adsorption of titanium ethoxide is a self-limited process at substrate temperatures 100-250 degrees C. A relatively small amount of precursor ligands was released during titanium ethoxide adsorption while most of them was exchanged during the following water pulse. At temperatures 100-150 degrees C, incomplete reaction between surface intermediates and water hindered thefilm growth. Nevertheless, the deposition rate reached 0.06 nm per cycle at optimized precursor doses. At substrate temperatures above 250 degrees C,the thermal decomposition of titanium ethoxide markedly influenced the growth process. The growth rate increased with the reactor temperature and titanium ethoxide pulse time but it insignificantly depended on the titanium ethoxide pressure. Therefore reproducible deposition of thin films with uniform thickness was still possible at substrate temperatures up to 350 degrees C. The films grown at 100-150 degrees C were amorphous while those grown at 180 degrees C and higher substrate temperature, contained polycrystalline anatase. The refractive index of polycrystalline films reached 2.5 at thewavelength 580 nm. (C) 2000 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 00:52:47