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Titolo:
Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP(001)(2X4)
Autore:
Schmidt, WG; Esser, N; Frisch, AM; Vogt, P; Bernholc, J; Bechstedt, F; Zorn, M; Hannappel, T; Visbeck, S; Willig, F; Richter, W;
Indirizzi:
N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA N Carolina State Univ Raleigh NC USA 27695 pt Phys, Raleigh, NC 27695 USA Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany Univ Jena, IFTO, D-07743 Jena, Germany Univ Jena Jena Germany D-07743Univ Jena, IFTO, D-07743 Jena, Germany Hahn Meitner Inst Kernforsch Berlin GmbH, CD, D-14109 Berlin, Germany HahnMeitner Inst Kernforsch Berlin GmbH Berlin Germany D-14109 Germany
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 24, volume: 61, anno: 2000,
pagine: R16335 - R16338
SICI:
0163-1829(20000615)61:24<R16335:URASSA>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRONIC-STRUCTURE; TEMPERATURE-DEPENDENCE; ATOMIC-STRUCTURE; SEMICONDUCTORS; RECONSTRUCTIONS; ENERGIES; MODEL; INP;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
26
Recensione:
Indirizzi per estratti:
Indirizzo: Schmidt, WG N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA N Carolina State Univ Raleigh NC USA 27695 eigh, NC 27695 USA
Citazione:
W.G. Schmidt et al., "Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP(001)(2X4)", PHYS REV B, 61(24), 2000, pp. R16335-R16338

Abstract

A detailed analysis based on first-principles calculations with self-energy corrections is combined with photoemission spectroscopy to determine the origin of features observed in reflectance anisotropy spectroscopy (RAS) atsemiconductor surfaces. Using the InP(001)(2x4) surface as a model case weobtain quantitative agreement between slab calculations and low-temperature RAS measurements. We find the contributions to the anisotropy signal related either directly to surface states or to transitions between surface perturbed bulk wave functions. Our results demonstrate the high sensitivity ofRAS to the surface structure and chemistry and show that the absorption processes causing the anisotropy signal take place in the uppermost few atomic layers of the substrate.

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Documento generato il 20/01/21 alle ore 02:44:20