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Titolo:
Status of HgCdTe-MBE technology for producing dual-band infrared detectors
Autore:
Rajavel, RD; Brewer, PD; Jamba, DM; Jensen, JE; LeBeau, C; Olson, GL; Roth, JA; Williamson, WS; Bangs, JW; Goetz, P; Johnson, JL; Patten, EA; Wilson, JA;
Indirizzi:
LLC, HRL Labs, Malibu, CA 90265 USA LLC Malibu CA USA 90265LLC, HRL Labs, Malibu, CA 90265 USA Raytheon Infrared Ctr Excellence, Goleta, CA 93117 USA Raytheon Infrared Ctr Excellence Goleta CA USA 93117 Goleta, CA 93117 USA
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
, volume: 214, anno: 2000,
pagine: 1100 - 1105
SICI:
0022-0248(200006)214:<1100:SOHTFP>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
BEAM EPITAXIAL-GROWTH; INTEGRATED MULTISENSOR SYSTEM; AS-DOPED HGCDTE; PERFORMANCE;
Keywords:
IR detector; MBE; HgCdTe; in situ sensor; FPA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Rajavel, RD LLC, HRL Labs, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA LLC3011 Malibu Canyon Rd Malibu CA USA 90265 bu, CA 90265 USA
Citazione:
R.D. Rajavel et al., "Status of HgCdTe-MBE technology for producing dual-band infrared detectors", J CRYST GR, 214, 2000, pp. 1100-1105

Abstract

Progress on achieving reproducible growth of high performance, dual-band IR detector structures in HgCdTe grown by molecular beam epitaxy (MBE) is described. The reproducibility achieved in the MBE growth of n-p-n device structures comprising HgCdTe epitaxial layers with different composition and doping characteristics was evaluated from the run-to-run precision in the alloy composition, dopant concentration and dislocation density. For a seriesof 25 growth runs. the standard deviation of the alloy composition in the n-type absorbing layer was 0.002; the yield for the in situ n- and p-type doping process was > 95%; and the average dislocation density was < 5 x 10(5) cm(-2). In situ optical diagnostics, including spectroscopic ellipsometryand an optical absorption flux monitor were used for the real-time determination of the alloy composition and Cd flux during MBE growth of the two-color device structures. Focal plane arrays with 128 x 128 elements were fabricated for the simultaneous detection of two sub-bands in the MWIR spectrum. Average R(o)A values exceeding 1 x 10(6) and 2 x 10(5) Ohm cm(2) were measured at 77 K for diodes operating at 4.0 and 4.5 mu m, respectively, and the quantum efficiency was greater than 70% in each band. These results on MBE growth and device performance demonstrate that HgCdTe MBE technology is poised for the modest-scale production of advanced IR devices. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 09/07/20 alle ore 14:19:27