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Titolo:
Carbon-associated Si(001)-c(4 x 4) reconstruction dosed with hydrogen
Autore:
Stoffel, M; Simon, L; Aubel, D; Bischoff, JL; Kubler, L;
Indirizzi:
LPSE, CNRS, UPRES A 7014, Fac Sci, F-68093 Mulhouse, France LPSE Mulhouse France F-68093 S A 7014, Fac Sci, F-68093 Mulhouse, France
Titolo Testata:
SURFACE SCIENCE
, volume: 454, anno: 2000,
pagine: 201 - 206
SICI:
0039-6028(20000520)454:<201:CSX4RD>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
C(4X4) RECONSTRUCTION; SURFACE; SI(100); C2H4; LEED;
Keywords:
carbon; hydrogen atom; low energy electron diffraction (LEED); photoelectron diffraction; silicon; silicon carbide; surface relaxation and reconstruction; X-ray photoelectron spectroscopy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Kubler, L LPSE, CNRS, UPRES A 7014, Fac Sci, F-68093 Mulhouse, France LPSE Mulhouse France F-68093 Fac Sci, F-68093 Mulhouse, France
Citazione:
M. Stoffel et al., "Carbon-associated Si(001)-c(4 x 4) reconstruction dosed with hydrogen", SURF SCI, 454, 2000, pp. 201-206

Abstract

It has recently been recognized that initial carbon (C) accommodation on Si(001)-(2 x 1) surfaces (less than 1 monolayer, at 600 degrees C and using various C precursors) causes a c(4 x 4) surface reconstruction. In this paper we intend to determine the C lattice sites associated to this reconstruction. C Is XPS signatures indicate a main contribution of C atoms dominantly located in substitutional subsurface sites and a weaker contribution, of 1.6 eV higher binding energy, attributed to C surface sites. C Is X-ray photoelectron diffraction polar observations along [010] azimuths ascertain C location within the first five Si layers and the C atoms at the origin of the observed angular modulations are necessarily located from the third to fifth subsurface layers. By c(4 x 4) surface exposure to atomic hydrogen at room temperature, a 1 x 1 LEED diagram is restored. As for the Si(001)-(2 x1) reconstruction, it demonstrates a break of hydrogen-saturated surface dimers. The latter may be restored by annealing but with a kinetics different from that of a simple Si dihydride desorption. These results essentially support c(4 x 4) reconstruction models with surface dimers including C atoms and a subsurface C-rich SinC alloy. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 20/09/20 alle ore 04:58:58