Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Electronic structure of the Si(001) surface with Pb adsorbates
Autore:
Tono, K; Yeom, HW; Matsuda, I; Ohta, T;
Indirizzi:
Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120790, South Korea Yonsei Univ Seoul South Korea 120790 Res Ctr, Seoul 120790, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120790, South Korea Yonsei UnivSeoul South Korea 120790 ppl Phys, Seoul 120790, South Korea Univ Tokyo, Dept Chem, Tokyo 1130033, Japan Univ Tokyo Tokyo Japan 1130033 iv Tokyo, Dept Chem, Tokyo 1130033, Japan
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 23, volume: 61, anno: 2000,
pagine: 15866 - 15872
SICI:
0163-1829(20000615)61:23<15866:ESOTSS>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING-TUNNELING-MICROSCOPY; ANGLE-RESOLVED-PHOTOEMISSION; INITIAL-STAGE GROWTH; ROOM-TEMPERATURE; SI(100) SURFACE; PHOTOELECTRON-SPECTROSCOPY; PB/SI(001) SYSTEM; ADSORPTION; AL; SUPERSTRUCTURES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
36
Recensione:
Indirizzi per estratti:
Indirizzo: Yeom, HW Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120790, South Korea Yonsei Univ Seoul South Korea 120790 Seoul 120790, South Korea
Citazione:
K. Tono et al., "Electronic structure of the Si(001) surface with Pb adsorbates", PHYS REV B, 61(23), 2000, pp. 15866-15872

Abstract

The electronic structures of the Pb-adsorbed Si(001) surface have been studied by angle-resolved photoelectron spectroscopy (ARPES) using synchrotronradiation. In addition to the evolution of surface electronic states during Pb initial growth at room temperature up to similar to 2 monolayers (ML's), detailed surface-state band dispersions were investigated for the single-domain 2 x 2-Pb and 2 x 1-Pb surfaces occurring at similar to 0.5 and similar to 1.0 ML, respectively. On the 2 x 2-Pb surface, four surface-state bands were identified within the bulk band gap. The surface band structure ofthe 2 x 2-Pb surface is close to that of the Si(001)2 x 2-Al (In) surface suggesting an overall similarity of their surface structures. While the 2 x2-Pb surface is found to be semiconducting with a band gap larger than 0.5eV, the 2 x 1-Pb surface is revealed to be metallic with five different surface-state bands. Above 1.0 ML, the ARPES spectra of the Pb/Si(001) surface hardly change with increasing the Pb coverage. The correlation between the surface electronic structures and the intriguing surface structures of different Pb coverages is discussed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 09:22:15