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Titolo:
The impacts of control gate voltage on the cycling endurance of split gateflash memory
Autore:
Huang, KC; Fang, YK; Yaung, DN; Chen, CW; Sung, HC; Kuo, DS; Wang, CS; Liang, MS;
Indirizzi:
Natl Cheng Kung Univ, Dept Elect Engn, VLSI Technol Lab, Tainan 70101, Taiwan Natl Cheng Kung Univ Tainan Taiwan 70101 chnol Lab, Tainan 70101, Taiwan Ming Hsin Inst Technol, Hsinchu 304, Taiwan Ming Hsin Inst Technol Hsinchu Taiwan 304 t Technol, Hsinchu 304, Taiwan Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan Taiwan Semicond Mfg Co Ltd Hsinchu Taiwan d Mfg Co Ltd, Hsinchu, Taiwan
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 7, volume: 21, anno: 2000,
pagine: 359 - 361
SICI:
0741-3106(200007)21:7<359:TIOCGV>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
CELL;
Keywords:
cycling endurance; flash EEPROM's; split gate;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Huang, KC Natl Cheng Kung Univ, Dept Elect Engn, VLSI Technol Lab, 1 Univ Rd, Tainan70101, Taiwan Natl Cheng Kung Univ 1 Univ Rd Tainan Taiwan 701010101, Taiwan
Citazione:
K.C. Huang et al., "The impacts of control gate voltage on the cycling endurance of split gateflash memory", IEEE ELEC D, 21(7), 2000, pp. 359-361

Abstract

In this paper, the "erase" degradation in program/erase (P/E) cycling endurance of split-gate flash memory has been investigated. It is found that increasing the control-gate (CG) voltage (V-CG) during erasing can slow down the "window closure" of cycling endurance since a higher V-CG can "push" the FG potential into gradual part of IRead-out - V-FG curve and in turn reduce the read-out current degradation. Moreover, the experimental results show that scaling down the gate oxide thickness under FG can effective reduce the IRead-out degradation in cycling endurance test.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/11/18 alle ore 03:35:30