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Titolo:
The effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization
Autore:
Kim, TK; Kim, GB; Lee, BI; Joo, SK;
Indirizzi:
Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea Seoul Natl Univ Seoul South Korea 151742 Engn, Seoul 151742, South Korea
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 7, volume: 21, anno: 2000,
pagine: 347 - 349
SICI:
0741-3106(200007)21:7<347:TEOESA>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLY-SI TFTS; AMORPHOUS-SILICON; LEAKAGE CURRENT; PERFORMANCE;
Keywords:
electrical stress; MILC; Ni-offset; poly-Si; temperature;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, TK Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea Seoul Natl Univ Seoul South Korea 151742 oul 151742, South Korea
Citazione:
T.K. Kim et al., "The effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization", IEEE ELEC D, 21(7), 2000, pp. 347-349

Abstract

Asymmetric Ni-offset method was proposed to improve the electrical properties of poly-Si thin-film transistors (TFT's) fabricated by metal-induced lateral crystallization (MILC). The MILC/MILC boundary, which was inevitably located within the channel when formed by symmetric Ni-offset, could be successfully extracted from channel region by new asymmetric Ni-offset method. Therefore, thus fabricated TFT's showed lower leakage current and better thermal stability than symmetric Ni-offset TFT's. In addition, the effects of electrical stress and temperature on the electrical properties of symmetric/asymmetric Ni-offset TFT's were investigated.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/04/20 alle ore 16:38:44