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Titolo:
HOLE MOBILITIES AND THE EFFECTIVE HALL FACTOR IN P-TYPE GAAS
Autore:
WENZEL M; IRMER G; MONECKE J; SIEGEL W;
Indirizzi:
FREIBERG UNIV MIN & TECHNOL,INST THEORET PHYS,B V COTTA STR 4 D-09596FREIBERG GERMANY FREIBERG UNIV MIN & TECHNOL,INST EXPT PHYS D-09596 FREIBERG GERMANY
Titolo Testata:
Journal of applied physics
fascicolo: 12, volume: 81, anno: 1997,
pagine: 7810 - 7816
SICI:
0021-8979(1997)81:12<7810:HMATEH>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
III-V-COMPOUNDS; LATTICE MOBILITY; ALLOY SCATTERING; DOPED GAAS; SEMICONDUCTORS; TRANSPORT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
26
Recensione:
Indirizzi per estratti:
Citazione:
M. Wenzel et al., "HOLE MOBILITIES AND THE EFFECTIVE HALL FACTOR IN P-TYPE GAAS", Journal of applied physics, 81(12), 1997, pp. 7810-7816

Abstract

We prove the effective Hall factor in p-GaAs to be larger than valuesdiscussed in the literature up to now. The scattering rates for the relevant scattering mechanisms in p-GaAs have been recalculated after critical testing the existing models. These calculations allow to deduce theoretical drift and theoretical Hall mobilities as functions of temperature which can be compared with measured data. Theoretical Hall factors in the heavy and light hole bands and an effective Hall factor result. The calculated room temperature values of the drift mobility and of the effective Hall factor are 118 cm(2)/V s and 3.6, respectively. The fitted acoustic deformation potential E-1=7.9 eV and the fittedoptical coupling constant D-K=1.24X10(11) eV/m are close to values published before. It is shown that the measured strong dependence of theHall mobility on the Hall concentration is not mainly caused by scattering by ionized impurities but by the dependence of the effective Hall factor on the hole concentration. (C) 1997 American Institute of Physics.

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Documento generato il 15/07/20 alle ore 08:49:10