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Titolo:
High reflectivity measurements using the beat frequency of longitudinal modes of external cavity semiconductor lasers
Autore:
Eom, J; Su, CA;
Indirizzi:
Texas A&M Univ, Dept Elect Engn, College Stn, TX 77843 USA Texas A&M UnivCollege Stn TX USA 77843 t Engn, College Stn, TX 77843 USA
Titolo Testata:
OPTICAL ENGINEERING
fascicolo: 6, volume: 39, anno: 2000,
pagine: 1587 - 1590
SICI:
0091-3286(200006)39:6<1587:HRMUTB>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
MODULATION;
Keywords:
reflectivity measurement; semiconductor external cavity laser;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Eom, J Texas A&M Univ, Dept Elect Engn, College Stn, TX 77843 USA Texas A&M Univ College Stn TX USA 77843 College Stn, TX 77843 USA
Citazione:
J. Eom e C.A. Su, "High reflectivity measurements using the beat frequency of longitudinal modes of external cavity semiconductor lasers", OPT ENG, 39(6), 2000, pp. 1587-1590

Abstract

The longitudinal mode spacing of an external cavity semiconductor laser isdramatically reduced if a high-reflectivity etalon is inserted in the external cavity. By measuring the reduction in the longitudinal mode beat frequency using a microwave spectrum analyzer, a quick and precise method for determining the coating reflectivity is demonstrated. (C) 2000 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(00)01106-5].

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Documento generato il 22/09/20 alle ore 15:56:47