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Titolo:
Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GdInN active layer
Autore:
Kamiyama, S; Iwaya, M; Amano, H; Akasaki, I;
Indirizzi:
Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ Nagoya Aichi Japan 4688502 ku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ Nagoya Aichi Japan 4688502 ku Ku, Nagoya, Aichi 4688502, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2A, volume: 39, anno: 2000,
pagine: 390 - 392
SICI:
0021-4922(200002)39:2A<390:POGSLW>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
CONTINUOUS-WAVE OPERATION; QUANTUM-WELL LASER; DIODES; SUBSTRATE;
Keywords:
semiconductor laser; spontaneous emission spectrum; gain spectrum; compositional inhomogeneity; GaN; GaInN; spectral broadening; theoretical analysis;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Kamiyama, S Meijo Univ, High Tech Res Ctr, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan Meijo Univ 1-501 Shiogamaguchi Nagoya Aichi Japan 4688502 apan
Citazione:
S. Kamiyama et al., "Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GdInN active layer", JPN J A P 1, 39(2A), 2000, pp. 390-392

Abstract

We have quantitatively analyzed the effect of spectral broadening due to acompositional inhomogeneity in GaInN active layer, on the threshold current density of GaN-based semiconductor lasers. using a simple broadening function model. Since the compositional inhomogeneity in the GaInN active layerdirectly results in the spectral broadening, we treated a broadening factor as a parameter showing the amount of inhomogeneity. We have shown a relationship between the threshold current density of GaN-based semiconductor lasers and full-width at half maximum (FWHM) of spontaneous emission spectra from the GaInN active layer of the devices, which is a useful information for realizing high performance GaN-based semiconductor lasers.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 11/07/20 alle ore 17:27:40