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Titolo:
Atomic layer CVD in the Bi-Ti-O system
Autore:
Schuisky, M; Kukli, K; Ritala, M; Harsta, A; Leskela, M;
Indirizzi:
Uppsala Univ, Angstrom Lab, Dept Inorgan Chem, SE-75121 Uppsala, Sweden Uppsala Univ Uppsala Sweden SE-75121 rgan Chem, SE-75121 Uppsala, Sweden Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia
Titolo Testata:
CHEMICAL VAPOR DEPOSITION
fascicolo: 3, volume: 6, anno: 2000,
pagine: 139 - 145
SICI:
0948-1907(200006)6:3<139:ALCITB>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; BI4TI3O12 THIN-FILMS; BISMUTH TITANATE; DIELECTRIC-PROPERTIES; GROWTH; EPITAXY;
Keywords:
atomic layer CVD; atomic layer epitaxy; bismuth titanate; Bi-Ti-O system; thin films;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
35
Recensione:
Indirizzi per estratti:
Indirizzo: Schuisky, M Uppsala Univ, Angstrom Lab, Dept Inorgan Chem, Box 538, SE-75121 Uppsala, Sweden Uppsala Univ Box 538 Uppsala Sweden SE-75121 Uppsala, Sweden
Citazione:
M. Schuisky et al., "Atomic layer CVD in the Bi-Ti-O system", CHEM VAPOR, 6(3), 2000, pp. 139-145

Abstract

Thin films in the Bi-Ti-O system have, for the first time, been deposited by atomic layer CVD (ALCVD) using triphenyl bismuth, titanium isopropoxide,and water as precursors. The influence of the Bi:Ti precursor pulsing ratio at the deposition temperature of 260 degrees C and the influence of deposition temperature in the interval 200-325 degrees C were investigated. The growth rates of the films were about 0.2 Angstrom/metal cycle, and the carbon content was less than 1.5 at.-%. The as-deposited films contained metallic bismuth but became amorphous upon annealing at 500 degrees C in air, andfurther annealing resulted in the formation of the dielectric Bi2Ti2O7 phase. The films annealed at 500 degrees C had permittivity values of around 60.

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Documento generato il 29/09/20 alle ore 00:19:18