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Titolo:
Growth of CuS thin films by the successive ionic layer adsorption and reaction method
Autore:
Lindroos, S; Arnold, A; Leskela, M;
Indirizzi:
Univ Helsinki, Inorgan Chem Lab, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Bordeaux 1, Dept Chem, Lab PhysicoChim Mol, LPCM, F-33405 Talence, France Univ Bordeaux 1 Talence France F-33405 ol, LPCM, F-33405 Talence, France
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 1-2, volume: 158, anno: 2000,
pagine: 75 - 80
SICI:
0169-4332(200005)158:1-2<75:GOCTFB>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRICAL-PROPERTIES; SILAR TECHNIQUE; COPPER SULFIDE; CUINS2 FILMS; ZNS; ELECTRODEPOSITION; DEPOSITION; CDS;
Keywords:
thin film; CuS; SILAR method; SEM; XRD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Lindroos, S Univ Helsinki, Inorgan Chem Lab, Dept Chem, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 inki, Finland
Citazione:
S. Lindroos et al., "Growth of CuS thin films by the successive ionic layer adsorption and reaction method", APPL SURF S, 158(1-2), 2000, pp. 75-80

Abstract

The growth of copper sulfide thin films by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and normal pressure was studied. The CuS films were characterized by chemical analysis, XRD, SEM and UV spectroscopy, The growth rate of CuS was proportional to copper precursor concentration. The films were polycrystalline and showed no preferred orientation. The surface of the CuS thin films was rough compared with CdS films, which were used as buffer layer on ITO and glass substrates to enhance the weak adhesion of CuS to oxide surfaces. (C) 2000 Elsevier ScienceB.V. All rights reserved.

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Documento generato il 30/09/20 alle ore 09:16:37