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Titolo:
Defect annealing kinetics in irradiated 6H-SiC
Autore:
Weber, WJ; Jiang, W; Thevuthasan, S;
Indirizzi:
Pacific NW Natl Lab, Richland, WA 99352 USA Pacific NW Natl Lab Richland WA USA 99352 atl Lab, Richland, WA 99352 USA
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, volume: 166, anno: 2000,
pagine: 410 - 414
SICI:
0168-583X(200005)166:<410:DAKII6>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
DAMAGE; ACCUMULATION;
Keywords:
silicon carbide; defects; annealing; ion irradiation; RBS/channeling;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Weber, WJ Pacific NW Natl Lab, MSIN K2-44,POB 999, Richland, WA 99352 USA Pacific NW Natl Lab MSIN K2-44,POB 999 Richland WA USA 99352 USA
Citazione:
W.J. Weber et al., "Defect annealing kinetics in irradiated 6H-SiC", NUCL INST B, 166, 2000, pp. 410-414

Abstract

Isochronal and isothermal annealing of ion-irradiation damage on the Si sublattice in 6H SiC has been investigated experimentally by in situ Rutherford backscattering spectrometry in channeling geometry (RBS/C). At low ion fluences corresponding to dilute concentrations of irradiation-induced defects, complete recovery of disorder on the Si sublattice can occur below roomtemperature. The implantation of helium impedes the defect recovery processes at low temperatures. Below room temperature, the thermal recovery of defects on the Si sublattice has an activation energy on the order of 0.25 +/- 0.1 eV. Recovery of disorder on the Si sublattice above 570 K has an activation energy on the order of 1.5 +/- 0.3 eV. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/01/20 alle ore 03:16:39