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Titolo:
Irradiation effects and thermal annealing behavior in H-2(+)-implanted 6H-SiC
Autore:
Jiang, W; Weber, WJ; Thevuthasan, S; Grotzschel, R;
Indirizzi:
Pacific NW Natl Lab, Richland, WA 99352 USA Pacific NW Natl Lab Richland WA USA 99352 atl Lab, Richland, WA 99352 USA Res Ctr Rossendorf, D-01314 Dresden, Germany Res Ctr Rossendorf Dresden Germany D-01314 orf, D-01314 Dresden, Germany
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, volume: 166, anno: 2000,
pagine: 374 - 378
SICI:
0168-583X(200005)166:<374:IEATAB>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
ION BEAM IRRADIATION; SILICON-CARBIDE; SIC CRYSTALS; DAMAGE; ACCUMULATION; TRANSITION; RECOVERY; HE+;
Keywords:
damage accumulation and recovery; blistering; hydrogen profiles; 6H-SiC;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Jiang, W Pacific NW Natl Lab, POB 999,MS K8-93,902 Battelle Blvd, Richland, WA 99352 USA Pacific NW Natl Lab POB 999,MS K8-93,902 Battelle Blvd Richland WA USA 99352
Citazione:
W. Jiang et al., "Irradiation effects and thermal annealing behavior in H-2(+)-implanted 6H-SiC", NUCL INST B, 166, 2000, pp. 374-378

Abstract

RBS/channeling (RBS/C) has been used to study the accumulation and isochronal recovery of disorder on the Si sublattice in 6H-SiC single crystals irradiated with 100 keV H-2(+) ions at 100 and 300 K. The disorder at the damage peak shows a sigmoidal dependence on ion fluence for both irradiation temperatures. Dramatic simultaneous recovery is observed for the irradiation at 300 K. At fluences below 1.5 x 10(16) H+ cm(-2), isochronal recovery occurs gradually over a wide temperature range. Above a fluence of 1.5 x 10(17) H+ cm(2), a near amorphous state is produced, and significant recovery does not occur. At intermediate fluences between 4.5 x 10(16) and 1.0 x 10(17) H+ cm(-2), damage recovery occurs more rapidly between 300 and 670 K. Further annealing at 1070 K results in the formation of blisters. Hydrogen depth profiles at 100 and 300 K; are comparable and are well predicted by SRIM-97 simulations. Hydrogen release of about 30% is observed for silicon carbide (SiC) irradiated at 100 K and subsequently annealed at 1070 It for 20 min. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 22/01/20 alle ore 21:55:11