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Titolo:
PHASE REACTION AND DIFFUSION PATH OF THE SIC TI SYSTEM/
Autore:
NAKA M; FENG JC; SCHUSTER JC;
Indirizzi:
OSAKA UNIV,JOINING & WELDING RES INST OSAKA 567 JAPAN
Titolo Testata:
Metallurgical and materials transactions. A, Physical metallurgy andmaterials science
fascicolo: 6, volume: 28, anno: 1997,
pagine: 1385 - 1390
SICI:
1073-5623(1997)28:6<1385:PRADPO>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
11
Recensione:
Indirizzi per estratti:
Citazione:
M. Naka et al., "PHASE REACTION AND DIFFUSION PATH OF THE SIC TI SYSTEM/", Metallurgical and materials transactions. A, Physical metallurgy andmaterials science, 28(6), 1997, pp. 1385-1390

Abstract

Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1373 to 1773 K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673 K using Ti foil with a thickness of 50 mu m. At a bonding time of 0.3 ks, TiC at the Ti side and a mixture of Ti5Si3Cx and TiC at the SiC side were formed, yielding the structure sequence of beta-Ti/Ti + TiC/Ti5Si3Cx + TiC/SiC. Furthermore, at the bonding time of 0.9 ks, a Ti5Si3Cx layer phase appeared between SiC and the mixture of Ti5Si3Cx and TiC. Upon the formation of Ti3SiC2 (T phase) after the bonding time of 3.6 ks, the complete diffusion path was observed as follows: beta-Ti/Ti + TiC/Ti5Si3Cx + TiC/Ti5Si3Cx/Ti3SiC2/SiC. The activation energies for growth of TiC, Ti5Si3Cx, and Ti3SiC2 were 194, 242, and 358 kJ/mol, respectively.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 06:09:44