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Titolo:
ELECTRON EMITTER DEVICE OF NEA DIAMOND THIN-FILM
Autore:
HATA A; OGAWA K; EIMORI N; DEGUCHI M; KITABATAKE M; ITO T; HIRAKI A;
Indirizzi:
OSAKA UNIV,DEPT ELECT ENGN,2-1 YAMADA OKA SUITA OSAKA 565 JAPAN MATSUSHITA ELECT IND CO LTD,CENT RES LABS KYOTO 61902 JAPAN
Titolo Testata:
Applied surface science
, volume: 117, anno: 1997,
pagine: 592 - 596
SICI:
0169-4332(1997)117:<592:EEDOND>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
VAPOR-DEPOSITED DIAMOND; COLD-CATHODE; SURFACE; AFFINITY; PHOTOYIELD;
Keywords:
NEGATIVE ELECTRON AFFINITY; ELECTRON EMITTER; SURFACE CONDUCTIVITY; METAL/DIAMOND INTERFACE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
A. Hata et al., "ELECTRON EMITTER DEVICE OF NEA DIAMOND THIN-FILM", Applied surface science, 117, 1997, pp. 592-596

Abstract

A new type of cold cathode of chemical vapor deposited diamond thin film is proposed. The electron emitter consists of a hydrogenated diamond surface of negative electron affinity (NEA) which also is a p-type semiconducting layer, and a metal-insulator-semiconductor (MIS) structure for electron injection into the diamond film. The diamond film is deposited by microwave plasma chemical vapor deposition (CVD) and thinned by electron cyclotron resonance (ECR) plasma etching. The p-type conductivity of the hydrogenated diamond surface is taken into consideration as well as the NEA feature itself to design the emitter device. The emitter worked from a low driving voltage of 40 V with high cathode efficiency of 2%, which mean the applying voltage for the MIS diode and the ratio of the emission current to the diode current, respectively. The emission current of 20 pA was obtained at a driving voltage of100 V for the fabricated cathode.

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Documento generato il 17/01/21 alle ore 17:03:36