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Titolo:
Angular dependences of surface composition, sputtering and ripple formation on silicon under N-2(+) ion bombardment
Autore:
Bachurin, VI; Lepshin, PA; Smirnov, VK;
Indirizzi:
Russian Acad Sci, Inst Microelect, Yaroslavl 150051, Russia Russian Acad Sci Yaroslavl Russia 150051 elect, Yaroslavl 150051, Russia
Titolo Testata:
VACUUM
fascicolo: 4, volume: 56, anno: 2000,
pagine: 241 - 245
SICI:
0042-207X(200003)56:4<241:ADOSCS>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROUGHENING INSTABILITY; NITRIDE LAYERS; YIELD CHANGE; TOPOGRAPHY; ENERGY; SI; IMPLANTATION; BEAMS; ANGLE; O-2+;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
36
Recensione:
Indirizzi per estratti:
Indirizzo: Bachurin, VI Russian Acad Sci, Inst Microelect, 3 Krasnoborskaya Str, Yaroslavl 150051,Russia Russian Acad Sci 3 Krasnoborskaya Str Yaroslavl Russia150051
Citazione:
V.I. Bachurin et al., "Angular dependences of surface composition, sputtering and ripple formation on silicon under N-2(+) ion bombardment", VACUUM, 56(4), 2000, pp. 241-245

Abstract

The correlation between angular dependences of surface composition and sputtering yield of Si by N-2(+) ions was found. It may explain anamalous (in comparison to Ar+ ion bombardment on Si) sharp increasing of sputtering yield at angles of ion incidence over 30 degrees. Angular range of ripple formation on Si surface bombarded by 1.5-9 keV N-2(+) ions was measured. It belongs to the interval of angles of ion incidence where heterogeneity of surface layers and pronounced changes of sputtering were observed. (C) 2000 Elsevier Science Ltd. All rights reserved.

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Documento generato il 27/11/20 alle ore 01:55:54